APA (7th ed.) Citation

SAIDOV, A. S., USMONOV, S. N., KALANOV, M. U., SAPAROV, D. V., ISHNIYAZOV, T. T., AKHMEDOV, A. M., . . . RAZZOKOV, A. S. (2025). Growing Perfect Single-Crystal Epitaxial Films of (Si2)1-(GaN) Solid Solutions on Si (111) Substrates from the Liquid Phase. Acta Physica Polonica: A, 148(1), 29. https://doi.org/10.12693/APhysPolA.148.29

Chicago Style (17th ed.) Citation

SAIDOV, A. S., SH. N. USMONOV, M. U. KALANOV, D. V. SAPAROV, T. T. ISHNIYAZOV, A. M. AKHMEDOV, M. B. TAGAEV, and A. SH RAZZOKOV. "Growing Perfect Single-Crystal Epitaxial Films of (Si2)1-(GaN) Solid Solutions on Si (111) Substrates from the Liquid Phase." Acta Physica Polonica: A 148, no. 1 (2025): 29. https://doi.org/10.12693/APhysPolA.148.29.

MLA (9th ed.) Citation

SAIDOV, A. S., et al. "Growing Perfect Single-Crystal Epitaxial Films of (Si2)1-(GaN) Solid Solutions on Si (111) Substrates from the Liquid Phase." Acta Physica Polonica: A, vol. 148, no. 1, 2025, p. 29, https://doi.org/10.12693/APhysPolA.148.29.