Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors. - Khan, Asir Intisar; Kim, Jeong-Kyu; Sikder, Urmita; Das, Koushik; Rodriguez, Thomas; Soman, Rohith; Chowdhury, Srabanti; Salahuddin, Sayeef (Science, 2025)