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Ferroelectric Devices for In‐Memory and In‐Sensor Computing.

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Title: Ferroelectric Devices for In‐Memory and In‐Sensor Computing.
Authors: Fang, Hong1,2 (AUTHOR), Xie, Ronghuan1,2 (AUTHOR), Cao, Qiang1 (AUTHOR) sdy_caoq@ujn.edu.cn, Yan, Shishen1,2 (AUTHOR) shishenyan@sdu.edu.cn, Wang, Xiaolin3 (AUTHOR) xiaolin_wang@uow.edu.au, Zheng, Limei2 (AUTHOR) zhenglm@sdu.edu.cn
Source: Advanced Science. Apr2026, p1. 21p. 11 Illustrations.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 193162739
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Science%22">Advanced Science</searchLink>. Apr2026, p1. 21p. 11 Illustrations.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=193162739
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1002/advs.202600007
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      – Code: eng
        Text: English
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        PageCount: 21
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      – TitleFull: Ferroelectric Devices for In‐Memory and In‐Sensor Computing.
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            NameFull: Fang, Hong
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            NameFull: Xie, Ronghuan
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            NameFull: Cao, Qiang
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            NameFull: Yan, Shishen
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            NameFull: Wang, Xiaolin
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            NameFull: Zheng, Limei
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            – D: 23
              M: 04
              Text: Apr2026
              Type: published
              Y: 2026
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