Moscotin, M., Jorudas, J., Prystawko, P., Saniuk, M., Kovalevskij, V., & Kašalynas, I. (2026). Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures. Sensors (14248220), 26(9), 2701. https://doi.org/10.3390/s26092701
Chicago Style (17th ed.) CitationMoscotin, Maxim, Justinas Jorudas, Pawel Prystawko, Miroslav Saniuk, Vitalij Kovalevskij, and Irmantas Kašalynas. "Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures." Sensors (14248220) 26, no. 9 (2026): 2701. https://doi.org/10.3390/s26092701.
MLA (9th ed.) CitationMoscotin, Maxim, et al. "Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures." Sensors (14248220), vol. 26, no. 9, 2026, p. 2701, https://doi.org/10.3390/s26092701.