APA (7th ed.) Citation

Liang, D., Chapman, D., Li, Y., Oakley, D., Napoleone, T., Juodawlkis, P., . . . Bowers, J. (2011). Uniformity study of wafer-scale InP-to-silicon hybrid integration. Applied Physics A: Materials Science & Processing, 103(1), 213. https://doi.org/10.1007/s00339-010-5999-z

Chicago Style (17th ed.) Citation

Liang, Di, et al. "Uniformity Study of Wafer-scale InP-to-silicon Hybrid Integration." Applied Physics A: Materials Science & Processing 103, no. 1 (2011): 213. https://doi.org/10.1007/s00339-010-5999-z.

MLA (9th ed.) Citation

Liang, Di, et al. "Uniformity Study of Wafer-scale InP-to-silicon Hybrid Integration." Applied Physics A: Materials Science & Processing, vol. 103, no. 1, 2011, p. 213, https://doi.org/10.1007/s00339-010-5999-z.