Pachinger, D., Groiss, H., Teuchtmann, M., Hesser, G., & Schäffler, F. (2011). Surfactant-mediated Si quantum dot formation on Ge(001). Applied Physics Letters, 98(22), 223104. https://doi.org/10.1063/1.3595486
Chicago Style (17th ed.) CitationPachinger, D., H. Groiss, M. Teuchtmann, G. Hesser, and F. Schäffler. "Surfactant-mediated Si Quantum Dot Formation on Ge(001)." Applied Physics Letters 98, no. 22 (2011): 223104. https://doi.org/10.1063/1.3595486.
MLA (9th ed.) CitationPachinger, D., et al. "Surfactant-mediated Si Quantum Dot Formation on Ge(001)." Applied Physics Letters, vol. 98, no. 22, 2011, p. 223104, https://doi.org/10.1063/1.3595486.
Warning: These citations may not always be 100% accurate.