APA (7th ed.) Citation

Marzegalli, A., Brunetto, M., Salvalaglio, M., Montalenti, F., Nicotra, G., Scuderi, M., . . . Capellini, G. (2013). Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling. Physical Review B: Condensed Matter & Materials Physics, 88(16), 165418-1. https://doi.org/10.1103/PhysRevB.88.165418

Chicago Style (17th ed.) Citation

Marzegalli, Anna, Matteo Brunetto, Marco Salvalaglio, Francesco Montalenti, Giuseppe Nicotra, Mario Scuderi, Corrado Spinella, Monica De Seta, and Giovanni Capellini. "Onset of Plastic Relaxation in the Growth of Ge on Si(001) at Low Temperatures: Atomic-scale Microscopy and Dislocation Modeling." Physical Review B: Condensed Matter & Materials Physics 88, no. 16 (2013): 165418-1. https://doi.org/10.1103/PhysRevB.88.165418.

MLA (9th ed.) Citation

Marzegalli, Anna, et al. "Onset of Plastic Relaxation in the Growth of Ge on Si(001) at Low Temperatures: Atomic-scale Microscopy and Dislocation Modeling." Physical Review B: Condensed Matter & Materials Physics, vol. 88, no. 16, 2013, pp. 165418-1, https://doi.org/10.1103/PhysRevB.88.165418.