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Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling.

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Title: Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling.
Authors: Marzegalli, Anna1 anna.marzegalli@unimib.it, Brunetto, Matteo1, Salvalaglio, Marco1, Montalenti, Francesco1, Nicotra, Giuseppe2, Scuderi, Mario2, Spinella, Corrado2, De Seta, Monica3, Capellini, Giovanni3
Source: Physical Review B: Condensed Matter & Materials Physics. Oct2013, Vol. 88 Issue 16, p165418-1-165418-6. 6p.
Database: Academic Search Ultimate
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  Data: <searchLink fieldCode="JN" term="%22Physical+Review+B%3A+Condensed+Matter+%26+Materials+Physics%22">Physical Review B: Condensed Matter & Materials Physics</searchLink>. Oct2013, Vol. 88 Issue 16, p165418-1-165418-6. 6p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=92868286
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        Value: 10.1103/PhysRevB.88.165418
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      – TitleFull: Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling.
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              Text: Oct2013
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