Bibliographic Details
| Title: |
Radiation damage of silicon microstrip detectors by high doses of 200 MeV electrons |
| Authors: |
Takahashi, T.1 takahasi@lambda.phys.tohoku.ac.jp, Ukai, M.1, Yoshida, A.1, Fujii, Y.1, Dobashi, K.1, Hashimoto, O.1, Maeda, K.1, Miyamoto, A.2, Miyoshi, T.1, Nakamura, S.N.1, Okayasu, Y.1, Tamae, T.2, Tamura, H.1, Tsukada, K.1, Watanabe, T.1 |
| Source: |
Nuclear Instruments & Methods in Physics Research Section A. Oct2003, Vol. 511 Issue 3, p328. 7p. |
| Subjects: |
Strip transmission lines, Silicon, Electron beams, Irradiation |
| Abstract: |
A single-sided N-type silicon microstrip detector (SSD) was directly irradiated by a 200 MeV electron beam in order to examine radiation hardness. The leakage current increased linearly with the fluence up to 5×1014/cm2. The SSD efficiency began to drop at 2×1014/cm2, but was recovered by increasing the bias to 150 V and was maintained up to 3×1014/cm2. Noise figures increased slightly, but were within acceptable levels. Our results show that SSDs can operate up to a 200 MeV electron fluence of 3×1014/cm2 without any significant degradation in performance. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
