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Radiation damage of silicon microstrip detectors by high doses of 200 MeV electrons

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Title: Radiation damage of silicon microstrip detectors by high doses of 200 MeV electrons
Authors: Takahashi, T.1 takahasi@lambda.phys.tohoku.ac.jp, Ukai, M.1, Yoshida, A.1, Fujii, Y.1, Dobashi, K.1, Hashimoto, O.1, Maeda, K.1, Miyamoto, A.2, Miyoshi, T.1, Nakamura, S.N.1, Okayasu, Y.1, Tamae, T.2, Tamura, H.1, Tsukada, K.1, Watanabe, T.1
Source: Nuclear Instruments & Methods in Physics Research Section A. Oct2003, Vol. 511 Issue 3, p328. 7p.
Subjects: Strip transmission lines, Silicon, Electron beams, Irradiation
Abstract: A single-sided N-type silicon microstrip detector (SSD) was directly irradiated by a 200 MeV electron beam in order to examine radiation hardness. The leakage current increased linearly with the fluence up to 5×1014/cm2. The SSD efficiency began to drop at 2×1014/cm2, but was recovered by increasing the bias to 150 V and was maintained up to 3×1014/cm2. Noise figures increased slightly, but were within acceptable levels. Our results show that SSDs can operate up to a 200 MeV electron fluence of 3×1014/cm2 without any significant degradation in performance. [Copyright &y& Elsevier]
Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 10806572
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Radiation damage of silicon microstrip detectors by high doses of <f>200 MeV</f> electrons
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  Data: <searchLink fieldCode="AR" term="%22Takahashi%2C+T%2E%22">Takahashi, T.</searchLink><relatesTo>1</relatesTo><i> takahasi@lambda.phys.tohoku.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Ukai%2C+M%2E%22">Ukai, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yoshida%2C+A%2E%22">Yoshida, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Fujii%2C+Y%2E%22">Fujii, Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Dobashi%2C+K%2E%22">Dobashi, K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hashimoto%2C+O%2E%22">Hashimoto, O.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Maeda%2C+K%2E%22">Maeda, K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Miyamoto%2C+A%2E%22">Miyamoto, A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Miyoshi%2C+T%2E%22">Miyoshi, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Nakamura%2C+S%2EN%2E%22">Nakamura, S.N.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Okayasu%2C+Y%2E%22">Okayasu, Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Tamae%2C+T%2E%22">Tamae, T.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Tamura%2C+H%2E%22">Tamura, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Tsukada%2C+K%2E%22">Tsukada, K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Watanabe%2C+T%2E%22">Watanabe, T.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+A%22">Nuclear Instruments & Methods in Physics Research Section A</searchLink>. Oct2003, Vol. 511 Issue 3, p328. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Strip+transmission+lines%22">Strip transmission lines</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+beams%22">Electron beams</searchLink><br /><searchLink fieldCode="DE" term="%22Irradiation%22">Irradiation</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: A single-sided N-type silicon microstrip detector (SSD) was directly irradiated by a <f>200 MeV</f> electron beam in order to examine radiation hardness. The leakage current increased linearly with the fluence up to <f>5×1014/cm2</f>. The SSD efficiency began to drop at <f>2×1014/cm2</f>, but was recovered by increasing the bias to <f>150 V</f> and was maintained up to <f>3×1014/cm2</f>. Noise figures increased slightly, but were within acceptable levels. Our results show that SSDs can operate up to a <f>200 MeV</f> electron fluence of <f>3×1014/cm2</f> without any significant degradation in performance. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/S0168-9002(03)01975-2
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        Text: English
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        PageCount: 7
        StartPage: 328
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        Type: general
      – SubjectFull: Silicon
        Type: general
      – SubjectFull: Electron beams
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      – SubjectFull: Irradiation
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      – TitleFull: Radiation damage of silicon microstrip detectors by high doses of <f>200 MeV</f> electrons
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              Text: Oct2003
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