View in EDS

N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

Saved in:
Bibliographic Details
Title: N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit
Authors: Kanbara, T.1, Shibata, K.1, Fujiki, S.2,3, Kubozono, Y.1,2 kubozono@cc.okayama-u.ac.jp, Kashino, S.1, Urisu, T.3, Sakai, M.3, Fujiwara, A.2,4, Kumashiro, R.2,5, Tanigaki, K.2,5
Source: Chemical Physics Letters. Sep2003, Vol. 379 Issue 3/4, p223. 7p.
Subjects: Field-effect transistors, Thin films, Metal oxide semiconductors
Abstract: N-channel field effect transistors (FETs) were fabricated with thin films of C60 and Dy@C82. A typical enhancement-type FET property was observed in C60 FET above 220 K. The mobility of C60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C82 FET was found to be a normally-on type FET, which has a property different from that for C60 and C70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C60 and pentacene thin-film FETs. [Copyright &y& Elsevier]
Copyright of Chemical Physics Letters is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 10864151
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Kanbara%2C+T%2E%22">Kanbara, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Shibata%2C+K%2E%22">Shibata, K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Fujiki%2C+S%2E%22">Fujiki, S.</searchLink><relatesTo>2,3</relatesTo><br /><searchLink fieldCode="AR" term="%22Kubozono%2C+Y%2E%22">Kubozono, Y.</searchLink><relatesTo>1,2</relatesTo><i> kubozono@cc.okayama-u.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Kashino%2C+S%2E%22">Kashino, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Urisu%2C+T%2E%22">Urisu, T.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Sakai%2C+M%2E%22">Sakai, M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Fujiwara%2C+A%2E%22">Fujiwara, A.</searchLink><relatesTo>2,4</relatesTo><br /><searchLink fieldCode="AR" term="%22Kumashiro%2C+R%2E%22">Kumashiro, R.</searchLink><relatesTo>2,5</relatesTo><br /><searchLink fieldCode="AR" term="%22Tanigaki%2C+K%2E%22">Tanigaki, K.</searchLink><relatesTo>2,5</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Chemical+Physics+Letters%22">Chemical Physics Letters</searchLink>. Sep2003, Vol. 379 Issue 3/4, p223. 7p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductors%22">Metal oxide semiconductors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: N-channel field effect transistors (FETs) were fabricated with thin films of C60 and Dy@C82. A typical enhancement-type FET property was observed in C60 FET above 220 K. The mobility of C60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C82 FET was found to be a normally-on type FET, which has a property different from that for C60 and C70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C60 and pentacene thin-film FETs. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Chemical Physics Letters is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=10864151
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.cplett.2003.07.025
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 223
    Subjects:
      – SubjectFull: Field-effect transistors
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Metal oxide semiconductors
        Type: general
    Titles:
      – TitleFull: N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kanbara, T.
      – PersonEntity:
          Name:
            NameFull: Shibata, K.
      – PersonEntity:
          Name:
            NameFull: Fujiki, S.
      – PersonEntity:
          Name:
            NameFull: Kubozono, Y.
      – PersonEntity:
          Name:
            NameFull: Kashino, S.
      – PersonEntity:
          Name:
            NameFull: Urisu, T.
      – PersonEntity:
          Name:
            NameFull: Sakai, M.
      – PersonEntity:
          Name:
            NameFull: Fujiwara, A.
      – PersonEntity:
          Name:
            NameFull: Kumashiro, R.
      – PersonEntity:
          Name:
            NameFull: Tanigaki, K.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 26
              M: 09
              Text: Sep2003
              Type: published
              Y: 2003
          Identifiers:
            – Type: issn-print
              Value: 00092614
          Numbering:
            – Type: volume
              Value: 379
            – Type: issue
              Value: 3/4
          Titles:
            – TitleFull: Chemical Physics Letters
              Type: main
ResultId 1