N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit
Saved in:
| Title: | N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit |
|---|---|
| Authors: | Kanbara, T.1, Shibata, K.1, Fujiki, S.2,3, Kubozono, Y.1,2 kubozono@cc.okayama-u.ac.jp, Kashino, S.1, Urisu, T.3, Sakai, M.3, Fujiwara, A.2,4, Kumashiro, R.2,5, Tanigaki, K.2,5 |
| Source: | Chemical Physics Letters. Sep2003, Vol. 379 Issue 3/4, p223. 7p. |
| Subjects: | Field-effect transistors, Thin films, Metal oxide semiconductors |
| Abstract: | N-channel field effect transistors (FETs) were fabricated with thin films of C60 and Dy@C82. A typical enhancement-type FET property was observed in C60 FET above 220 K. The mobility of C60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C82 FET was found to be a normally-on type FET, which has a property different from that for C60 and C70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C60 and pentacene thin-film FETs. [Copyright &y& Elsevier] |
| Copyright of Chemical Physics Letters is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
Be the first to leave a comment!
