Low-Temperature Diffusion at Ni/SiC Interface with the Aid of Femtosecond Laser-Induced Strain.
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| Title: | Low-Temperature Diffusion at Ni/SiC Interface with the Aid of Femtosecond Laser-Induced Strain. |
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| Authors: | Yusuke Takidani1, Kazuki Morimoto1, Kenta Kondo1, Tomoyuki Ueki1, Takuro Tomita2, Yasuhiro Tanaka3, Tatsuya Okada2 tatsuya-okada@tokushima-u.ac.jp |
| Source: | Journal of Laser Micro / Nanoengineering. 2015, Vol. 10 Issue 3, p314-319. 6p. |
| Subjects: | Silicon carbide, Low temperatures, Diffusion, Interfaces (Physical sciences), Femtosecond lasers, Strains & stresses (Mechanics) |
| Abstract: | We investigated low-temperature annealing of the Ni/SiC system in which a laser-modified strained region was introduced in the SiC before annealing. The objective was to identify the Nisilicide phase, and to characterize the spatial distribution of carbon atoms. A Ni film with a nominal thickness of 500 nm was deposited on an n-type SiC substrate. The Ni/SiC interface was irradiated by femtosecond laser pulses to introduce the strained region. The laser light was incident on the interface through SiC, which is transparent to the femtosecond laser. Annealing was carried out at 573 K or 673 K. Micro-Raman spectroscopy detected amorphous carbon only on the Ni surface annealed at 673 K for 60 s. On the Ni surface annealed at 573 K for 60 s, carbon was not detected irrespective of laser-irradiation at the interface. This difference was thought to be due to the large difference in the carbon diffusion length in Ni at these annealing conditions. To identify the composition of nickel silicide, such as NiSi, NiSi2, and Ni2Si, we analyzed selected area diffraction patterns in transmission electron microscopy. The Ni-silicide phase at the Ni/SiC interface was identified as NiSi. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Laser Micro / Nanoengineering is the property of Japan Laser Processing Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 111986686 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Low-Temperature Diffusion at Ni/SiC Interface with the Aid of Femtosecond Laser-Induced Strain. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Yusuke+Takidani%22">Yusuke Takidani</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kazuki+Morimoto%22">Kazuki Morimoto</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kenta+Kondo%22">Kenta Kondo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Tomoyuki+Ueki%22">Tomoyuki Ueki</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Takuro+Tomita%22">Takuro Tomita</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Yasuhiro+Tanaka%22">Yasuhiro Tanaka</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Tatsuya+Okada%22">Tatsuya Okada</searchLink><relatesTo>2</relatesTo><i> tatsuya-okada@tokushima-u.ac.jp</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Laser+Micro+%2F+Nanoengineering%22">Journal of Laser Micro / Nanoengineering</searchLink>. 2015, Vol. 10 Issue 3, p314-319. 6p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Low+temperatures%22">Low temperatures</searchLink><br /><searchLink fieldCode="DE" term="%22Diffusion%22">Diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Interfaces+%28Physical+sciences%29%22">Interfaces (Physical sciences)</searchLink><br /><searchLink fieldCode="DE" term="%22Femtosecond+lasers%22">Femtosecond lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Strains+%26+stresses+%28Mechanics%29%22">Strains & stresses (Mechanics)</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: We investigated low-temperature annealing of the Ni/SiC system in which a laser-modified strained region was introduced in the SiC before annealing. The objective was to identify the Nisilicide phase, and to characterize the spatial distribution of carbon atoms. A Ni film with a nominal thickness of 500 nm was deposited on an n-type SiC substrate. The Ni/SiC interface was irradiated by femtosecond laser pulses to introduce the strained region. The laser light was incident on the interface through SiC, which is transparent to the femtosecond laser. Annealing was carried out at 573 K or 673 K. Micro-Raman spectroscopy detected amorphous carbon only on the Ni surface annealed at 673 K for 60 s. On the Ni surface annealed at 573 K for 60 s, carbon was not detected irrespective of laser-irradiation at the interface. This difference was thought to be due to the large difference in the carbon diffusion length in Ni at these annealing conditions. To identify the composition of nickel silicide, such as NiSi, NiSi2, and Ni2Si, we analyzed selected area diffraction patterns in transmission electron microscopy. The Ni-silicide phase at the Ni/SiC interface was identified as NiSi. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Laser Micro / Nanoengineering is the property of Japan Laser Processing Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.2961/jlmn.2015.03.0014 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 314 Subjects: – SubjectFull: Silicon carbide Type: general – SubjectFull: Low temperatures Type: general – SubjectFull: Diffusion Type: general – SubjectFull: Interfaces (Physical sciences) Type: general – SubjectFull: Femtosecond lasers Type: general – SubjectFull: Strains & stresses (Mechanics) Type: general Titles: – TitleFull: Low-Temperature Diffusion at Ni/SiC Interface with the Aid of Femtosecond Laser-Induced Strain. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Yusuke Takidani – PersonEntity: Name: NameFull: Kazuki Morimoto – PersonEntity: Name: NameFull: Kenta Kondo – PersonEntity: Name: NameFull: Tomoyuki Ueki – PersonEntity: Name: NameFull: Takuro Tomita – PersonEntity: Name: NameFull: Yasuhiro Tanaka – PersonEntity: Name: NameFull: Tatsuya Okada IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: 2015 Type: published Y: 2015 Identifiers: – Type: issn-print Value: 18800688 Numbering: – Type: volume Value: 10 – Type: issue Value: 3 Titles: – TitleFull: Journal of Laser Micro / Nanoengineering Type: main |
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