Low-Temperature Diffusion at Ni/SiC Interface with the Aid of Femtosecond Laser-Induced Strain.
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| Title: | Low-Temperature Diffusion at Ni/SiC Interface with the Aid of Femtosecond Laser-Induced Strain. |
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| Authors: | Yusuke Takidani1, Kazuki Morimoto1, Kenta Kondo1, Tomoyuki Ueki1, Takuro Tomita2, Yasuhiro Tanaka3, Tatsuya Okada2 tatsuya-okada@tokushima-u.ac.jp |
| Source: | Journal of Laser Micro / Nanoengineering. 2015, Vol. 10 Issue 3, p314-319. 6p. |
| Subjects: | Silicon carbide, Low temperatures, Diffusion, Interfaces (Physical sciences), Femtosecond lasers, Strains & stresses (Mechanics) |
| Abstract: | We investigated low-temperature annealing of the Ni/SiC system in which a laser-modified strained region was introduced in the SiC before annealing. The objective was to identify the Nisilicide phase, and to characterize the spatial distribution of carbon atoms. A Ni film with a nominal thickness of 500 nm was deposited on an n-type SiC substrate. The Ni/SiC interface was irradiated by femtosecond laser pulses to introduce the strained region. The laser light was incident on the interface through SiC, which is transparent to the femtosecond laser. Annealing was carried out at 573 K or 673 K. Micro-Raman spectroscopy detected amorphous carbon only on the Ni surface annealed at 673 K for 60 s. On the Ni surface annealed at 573 K for 60 s, carbon was not detected irrespective of laser-irradiation at the interface. This difference was thought to be due to the large difference in the carbon diffusion length in Ni at these annealing conditions. To identify the composition of nickel silicide, such as NiSi, NiSi2, and Ni2Si, we analyzed selected area diffraction patterns in transmission electron microscopy. The Ni-silicide phase at the Ni/SiC interface was identified as NiSi. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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