APA (7th ed.) Citation

Jabbari, I., Baira, M., Maaref, H., & Mghaieth, R. (2018). C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps. Physica E, 104, 216. https://doi.org/10.1016/j.physe.2018.07.035

Chicago Style (17th ed.) Citation

Jabbari, I., M. Baira, H. Maaref, and R. Mghaieth. "C-DLTS Interface Defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial Location of E2 Traps." Physica E 104 (2018): 216. https://doi.org/10.1016/j.physe.2018.07.035.

MLA (9th ed.) Citation

Jabbari, I., et al. "C-DLTS Interface Defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial Location of E2 Traps." Physica E, vol. 104, 2018, p. 216, https://doi.org/10.1016/j.physe.2018.07.035.