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C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps.

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Title: C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps.
Authors: Jabbari, I.1 jabariimen24@gmail.com, Baira, M.1,2, Maaref, H.1, Mghaieth, R.1
Source: Physica E. Oct2018, Vol. 104, p216-222. 7p.
Subjects: High electron mobility transistor circuits, Deep level transient spectroscopy, Hysteresis, Activation energy, Nanoribbons
Abstract: Abstract The purpose of this paper has focused on the investigation of the High electron mobility transistors AlGaN/GaN HEMTs based on SiC substrates by means of capacitance-voltage-temperature (C-V-T) and Deep Level Transient Spectroscopy (DLTS). The C-V analysis have been recorded in the 20–320 K temperature range and exhibit an increase in the pinch-off voltage by an amount of 300 mV once the temperature exceeds 200 K. A hysteresis phenomenon has been observed in the C-V spectra by sweeping the gate voltage Vgs forth and back between −5 and 0 V. This parasitic effect has identified to be related to trapping and detrapping mechanisms occurring in the GaN-HEMT device. DLTS results have proved the presence of two traps, labeled E1 and E2, with activation energies of 0.31eV and 0.525eV and capture cross sections of 3.86 × 10−18cm2 and 2.75 × 10−15cm2, respectively. The major E2 trap seems to be nitrogen anti-sites, possibly located in the buffer layer near to the interface AlGaN/GaN. It has been reported that there exists a good correlation betwixt the anomalies in C-V-T characteristics and DLTS measurements. Highlights • Traps in AlGaN/GaN/SiC HEMT have been characterized by C-V-T and DLTS measurements. • A hysteresis effect and a V pinch-off negative shift were revealed on C-V characteristics at different temperatures. • The major E2 trap seemed to be nitrogen anti-sites, possibly located in the buffer layer near the interface. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Abstract The purpose of this paper has focused on the investigation of the High electron mobility transistors AlGaN/GaN HEMTs based on SiC substrates by means of capacitance-voltage-temperature (C-V-T) and Deep Level Transient Spectroscopy (DLTS). The C-V analysis have been recorded in the 20–320 K temperature range and exhibit an increase in the pinch-off voltage by an amount of 300 mV once the temperature exceeds 200 K. A hysteresis phenomenon has been observed in the C-V spectra by sweeping the gate voltage Vgs forth and back between −5 and 0 V. This parasitic effect has identified to be related to trapping and detrapping mechanisms occurring in the GaN-HEMT device. DLTS results have proved the presence of two traps, labeled E1 and E2, with activation energies of 0.31eV and 0.525eV and capture cross sections of 3.86 × 10−18cm2 and 2.75 × 10−15cm2, respectively. The major E2 trap seems to be nitrogen anti-sites, possibly located in the buffer layer near to the interface AlGaN/GaN. It has been reported that there exists a good correlation betwixt the anomalies in C-V-T characteristics and DLTS measurements. Highlights • Traps in AlGaN/GaN/SiC HEMT have been characterized by C-V-T and DLTS measurements. • A hysteresis effect and a V pinch-off negative shift were revealed on C-V characteristics at different temperatures. • The major E2 trap seemed to be nitrogen anti-sites, possibly located in the buffer layer near the interface. [ABSTRACT FROM AUTHOR]
ISSN:13869477
DOI:10.1016/j.physe.2018.07.035