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C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps.

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Title: C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps.
Authors: Jabbari, I.1 jabariimen24@gmail.com, Baira, M.1,2, Maaref, H.1, Mghaieth, R.1
Source: Physica E. Oct2018, Vol. 104, p216-222. 7p.
Subjects: High electron mobility transistor circuits, Deep level transient spectroscopy, Hysteresis, Activation energy, Nanoribbons
Abstract: Abstract The purpose of this paper has focused on the investigation of the High electron mobility transistors AlGaN/GaN HEMTs based on SiC substrates by means of capacitance-voltage-temperature (C-V-T) and Deep Level Transient Spectroscopy (DLTS). The C-V analysis have been recorded in the 20–320 K temperature range and exhibit an increase in the pinch-off voltage by an amount of 300 mV once the temperature exceeds 200 K. A hysteresis phenomenon has been observed in the C-V spectra by sweeping the gate voltage Vgs forth and back between −5 and 0 V. This parasitic effect has identified to be related to trapping and detrapping mechanisms occurring in the GaN-HEMT device. DLTS results have proved the presence of two traps, labeled E1 and E2, with activation energies of 0.31eV and 0.525eV and capture cross sections of 3.86 × 10−18cm2 and 2.75 × 10−15cm2, respectively. The major E2 trap seems to be nitrogen anti-sites, possibly located in the buffer layer near to the interface AlGaN/GaN. It has been reported that there exists a good correlation betwixt the anomalies in C-V-T characteristics and DLTS measurements. Highlights • Traps in AlGaN/GaN/SiC HEMT have been characterized by C-V-T and DLTS measurements. • A hysteresis effect and a V pinch-off negative shift were revealed on C-V characteristics at different temperatures. • The major E2 trap seemed to be nitrogen anti-sites, possibly located in the buffer layer near the interface. [ABSTRACT FROM AUTHOR]
Copyright of Physica E is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 131664526
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  Label: Title
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  Data: C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps.
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  Data: <searchLink fieldCode="AR" term="%22Jabbari%2C+I%2E%22">Jabbari, I.</searchLink><relatesTo>1</relatesTo><i> jabariimen24@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Baira%2C+M%2E%22">Baira, M.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Maaref%2C+H%2E%22">Maaref, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Mghaieth%2C+R%2E%22">Mghaieth, R.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Physica+E%22">Physica E</searchLink>. Oct2018, Vol. 104, p216-222. 7p.
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  Data: <searchLink fieldCode="DE" term="%22High+electron+mobility+transistor+circuits%22">High electron mobility transistor circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Deep+level+transient+spectroscopy%22">Deep level transient spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Hysteresis%22">Hysteresis</searchLink><br /><searchLink fieldCode="DE" term="%22Activation+energy%22">Activation energy</searchLink><br /><searchLink fieldCode="DE" term="%22Nanoribbons%22">Nanoribbons</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Abstract The purpose of this paper has focused on the investigation of the High electron mobility transistors AlGaN/GaN HEMTs based on SiC substrates by means of capacitance-voltage-temperature (C-V-T) and Deep Level Transient Spectroscopy (DLTS). The C-V analysis have been recorded in the 20–320 K temperature range and exhibit an increase in the pinch-off voltage by an amount of 300 mV once the temperature exceeds 200 K. A hysteresis phenomenon has been observed in the C-V spectra by sweeping the gate voltage Vgs forth and back between −5 and 0 V. This parasitic effect has identified to be related to trapping and detrapping mechanisms occurring in the GaN-HEMT device. DLTS results have proved the presence of two traps, labeled E1 and E2, with activation energies of 0.31eV and 0.525eV and capture cross sections of 3.86 × 10−18cm2 and 2.75 × 10−15cm2, respectively. The major E2 trap seems to be nitrogen anti-sites, possibly located in the buffer layer near to the interface AlGaN/GaN. It has been reported that there exists a good correlation betwixt the anomalies in C-V-T characteristics and DLTS measurements. Highlights • Traps in AlGaN/GaN/SiC HEMT have been characterized by C-V-T and DLTS measurements. • A hysteresis effect and a V pinch-off negative shift were revealed on C-V characteristics at different temperatures. • The major E2 trap seemed to be nitrogen anti-sites, possibly located in the buffer layer near the interface. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Physica E is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.physe.2018.07.035
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 216
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      – SubjectFull: High electron mobility transistor circuits
        Type: general
      – SubjectFull: Deep level transient spectroscopy
        Type: general
      – SubjectFull: Hysteresis
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      – SubjectFull: Activation energy
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      – SubjectFull: Nanoribbons
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      – TitleFull: C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps.
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              Text: Oct2018
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