APA (7th ed.) Citation

Miranda, E., Mehonic, A., Ng, W. H., & Kenyon, A. J. (2019). Simulation of Cycle-to-Cycle Instabilities in SiO $_{{x}}$ -Based ReRAM Devices Using a Self-Correlated Process With Long-Term Variation. IEEE Electron Device Letters, 40(1), 28. https://doi.org/10.1109/LED.2018.2883620

Chicago Style (17th ed.) Citation

Miranda, E., A. Mehonic, W. H. Ng, and A. J. Kenyon. "Simulation of Cycle-to-Cycle Instabilities in SiO $_{{x}}$ -Based ReRAM Devices Using a Self-Correlated Process With Long-Term Variation." IEEE Electron Device Letters 40, no. 1 (2019): 28. https://doi.org/10.1109/LED.2018.2883620.

MLA (9th ed.) Citation

Miranda, E., et al. "Simulation of Cycle-to-Cycle Instabilities in SiO $_{{x}}$ -Based ReRAM Devices Using a Self-Correlated Process With Long-Term Variation." IEEE Electron Device Letters, vol. 40, no. 1, 2019, p. 28, https://doi.org/10.1109/LED.2018.2883620.