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Simulation of Cycle-to-Cycle Instabilities in SiO $_{{x}}$ -Based ReRAM Devices Using a Self-Correlated Process With Long-Term Variation.

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Title: Simulation of Cycle-to-Cycle Instabilities in SiO $_{{x}}$ -Based ReRAM Devices Using a Self-Correlated Process With Long-Term Variation.
Authors: Miranda, E., Mehonic, A., Ng, W. H., Kenyon, A. J.
Source: IEEE Electron Device Letters. Jan2019, Vol. 40 Issue 1, p28-31. 4p.
Subjects: Silica, Stochastic processes, Quantum point contacts
Abstract: Cycle-to-cycle (C2C) current variability occurring in ReRAM devices is not only a stochastic feature inherent to electron transport in low-dimensional conducting structures but also a consequence of the measurement protocol used to characterize the device evolution during resistance switching. In such latest case, C2C changes depend on the particular arrangement of the ions or vacancies that form the conducting filament spanning the dielectric film. In this letter, a discrete first-order autoregressive model AR(1) with long-term variation is used to represent both the random and the “deterministic” behaviors of the high resistance state current. Simulation of C2C instabilities in SiOx is carried out through the quantum point-contact model for filamentary electron transport in dielectrics with fluctuating confinement potential barrier height. Simplicity is of utmost importance, since the proposed approach is aimed for circuit simulation environments in which complex and time-consuming computations need to be avoided. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 134123166
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  Data: Simulation of Cycle-to-Cycle Instabilities in SiO $_{{x}}$ -Based ReRAM Devices Using a Self-Correlated Process With Long-Term Variation.
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  Data: <searchLink fieldCode="AR" term="%22Miranda%2C+E%2E%22">Miranda, E.</searchLink><br /><searchLink fieldCode="AR" term="%22Mehonic%2C+A%2E%22">Mehonic, A.</searchLink><br /><searchLink fieldCode="AR" term="%22Ng%2C+W%2E+H%2E%22">Ng, W. H.</searchLink><br /><searchLink fieldCode="AR" term="%22Kenyon%2C+A%2E+J%2E%22">Kenyon, A. J.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. Jan2019, Vol. 40 Issue 1, p28-31. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Silica%22">Silica</searchLink><br /><searchLink fieldCode="DE" term="%22Stochastic+processes%22">Stochastic processes</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+point+contacts%22">Quantum point contacts</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Cycle-to-cycle (C2C) current variability occurring in ReRAM devices is not only a stochastic feature inherent to electron transport in low-dimensional conducting structures but also a consequence of the measurement protocol used to characterize the device evolution during resistance switching. In such latest case, C2C changes depend on the particular arrangement of the ions or vacancies that form the conducting filament spanning the dielectric film. In this letter, a discrete first-order autoregressive model AR(1) with long-term variation is used to represent both the random and the “deterministic” behaviors of the high resistance state current. Simulation of C2C instabilities in SiOx is carried out through the quantum point-contact model for filamentary electron transport in dielectrics with fluctuating confinement potential barrier height. Simplicity is of utmost importance, since the proposed approach is aimed for circuit simulation environments in which complex and time-consuming computations need to be avoided. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/LED.2018.2883620
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        Text: English
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      – SubjectFull: Silica
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      – SubjectFull: Stochastic processes
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      – SubjectFull: Quantum point contacts
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      – TitleFull: Simulation of Cycle-to-Cycle Instabilities in SiO $_{{x}}$ -Based ReRAM Devices Using a Self-Correlated Process With Long-Term Variation.
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              Text: Jan2019
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