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Local Variability Evaluation on Effective Channel Length Extracted With Shift-and-Ratio Method.

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Title: Local Variability Evaluation on Effective Channel Length Extracted With Shift-and-Ratio Method.
Authors: Brito, Juan Pablo Martinez1 juanbrito@gmail.com, Bampi, Sergio2 bampi@inf.ufrgs.br
Source: IEEE Transactions on Electron Devices. Nov2020, Vol. 67 Issue 11, p4662-4666. 5p.
Subjects: Metal oxide semiconductor field-effect transistors, Semiconductor devices, Statistics, Data analysis, Work structure, Threshold voltage
Abstract: In this study, the local variation of the effective channel reduction parameter (ΔL = Lm-Leff) of a MOSFET is extracted by means of the traditional shift-and-ratio (SAR) method. ΔL is then correlated with the threshold voltage difference (ΔVTH) between the device under test (DUT) and the reference device. It is demonstrated that there exists an optimal VG range for extracting reliable values of ΔL through the SAR method. Statistical data analysis shows that for R ≈ (Llong/Lshort) ≈ 25, better results are achieved since the value of σ (ΔL) varies typically as the reciprocal 1/√W. The test structure used in this work is a Kelvin-based 2-D addressable MOSFET matrix implemented in 180-nm bulk CMOS technology. The sample space is of 2304 devices divided into nine subgroups of 256 same size closely placed nMOSFETs. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Local Variability Evaluation on Effective Channel Length Extracted With Shift-and-Ratio Method.
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  Data: <searchLink fieldCode="AR" term="%22Brito%2C+Juan+Pablo+Martinez%22">Brito, Juan Pablo Martinez</searchLink><relatesTo>1</relatesTo><i> juanbrito@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Bampi%2C+Sergio%22">Bampi, Sergio</searchLink><relatesTo>2</relatesTo><i> bampi@inf.ufrgs.br</i>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>. Nov2020, Vol. 67 Issue 11, p4662-4666. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+devices%22">Semiconductor devices</searchLink><br /><searchLink fieldCode="DE" term="%22Statistics%22">Statistics</searchLink><br /><searchLink fieldCode="DE" term="%22Data+analysis%22">Data analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Work+structure%22">Work structure</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink>
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  Label: Abstract
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  Data: In this study, the local variation of the effective channel reduction parameter (ΔL = Lm-Leff) of a MOSFET is extracted by means of the traditional shift-and-ratio (SAR) method. ΔL is then correlated with the threshold voltage difference (ΔVTH) between the device under test (DUT) and the reference device. It is demonstrated that there exists an optimal VG range for extracting reliable values of ΔL through the SAR method. Statistical data analysis shows that for R ≈ (Llong/Lshort) ≈ 25, better results are achieved since the value of σ (ΔL) varies typically as the reciprocal 1/√W. The test structure used in this work is a Kelvin-based 2-D addressable MOSFET matrix implemented in 180-nm bulk CMOS technology. The sample space is of 2304 devices divided into nine subgroups of 256 same size closely placed nMOSFETs. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TED.2020.3017178
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        Text: English
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      – SubjectFull: Metal oxide semiconductor field-effect transistors
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      – SubjectFull: Semiconductor devices
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      – SubjectFull: Statistics
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      – SubjectFull: Data analysis
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      – SubjectFull: Work structure
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      – SubjectFull: Threshold voltage
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              Text: Nov2020
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