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Transverse mode confinement in lithographic VCSELs.

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Title: Transverse mode confinement in lithographic VCSELs.
Authors: Deppe, D.G.1 (AUTHOR) ddeppe@sdphotonics.com, Leshin, J.1 (AUTHOR), Eifert, L.2 (AUTHOR), Tucker, F.2 (AUTHOR), Hillyer, T.2 (AUTHOR)
Source: Electronics Letters (Wiley-Blackwell). Nov2017, Vol. 53 Issue 23, p1598-1600. 3p.
Abstract: Index confinement is studied experimentally and through modelling for lithographic vertical‐cavity surface‐emitting lasers (VCSELs) and contrasted with other types of VCSELs. Modelling shows that the index confinement is set by the height of a shallow internal mesa that produces the optical mode confinement. Overgrowth with a semiconductor mirror enables a range of index confinement from zero (no index guiding) similar to proton‐implanted VCSELs to much higher confinement than viable for oxide VCSELs. Lasing spectra are studied for side‐mode‐suppression ratio and beam patterns are compared for high and low indexes confined VCSELs of different sizes. [ABSTRACT FROM AUTHOR]
Copyright of Electronics Letters (Wiley-Blackwell) is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 148786378
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PubType: Academic Journal
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  Data: Transverse mode confinement in lithographic VCSELs.
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  Data: <searchLink fieldCode="AR" term="%22Deppe%2C+D%2EG%2E%22">Deppe, D.G.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> ddeppe@sdphotonics.com</i><br /><searchLink fieldCode="AR" term="%22Leshin%2C+J%2E%22">Leshin, J.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Eifert%2C+L%2E%22">Eifert, L.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tucker%2C+F%2E%22">Tucker, F.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hillyer%2C+T%2E%22">Hillyer, T.</searchLink><relatesTo>2</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Electronics+Letters+%28Wiley-Blackwell%29%22">Electronics Letters (Wiley-Blackwell)</searchLink>. Nov2017, Vol. 53 Issue 23, p1598-1600. 3p.
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Index confinement is studied experimentally and through modelling for lithographic vertical‐cavity surface‐emitting lasers (VCSELs) and contrasted with other types of VCSELs. Modelling shows that the index confinement is set by the height of a shallow internal mesa that produces the optical mode confinement. Overgrowth with a semiconductor mirror enables a range of index confinement from zero (no index guiding) similar to proton‐implanted VCSELs to much higher confinement than viable for oxide VCSELs. Lasing spectra are studied for side‐mode‐suppression ratio and beam patterns are compared for high and low indexes confined VCSELs of different sizes. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Electronics Letters (Wiley-Blackwell) is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1049/el.2017.2780
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              Text: Nov2017
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