View in EDS PDF Full Text

Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials.

Saved in:
Bibliographic Details
Title: Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials.
Authors: Dragoman, Mircea1 (AUTHOR) martino.aldrigo@imt.ro, Aldrigo, Martino1 (AUTHOR), Dragoman, Daniela2,3 (AUTHOR) daniela.dragoman@unibuc.ro, Fanciulli, Marco (AUTHOR), Lofland, Sam (AUTHOR), Drazic, Goran (AUTHOR)
Source: Nanomaterials (2079-4991). Mar2021, Vol. 11 Issue 3, p625-625. 1p.
Subjects: Nanostructured materials, Electronic equipment, Molybdenum disulfide, Hafnium oxide, Memristors, Boron nitride
Abstract: Nanomaterials science is becoming the foundation stone of high-frequency applications. The downscaling of electronic devices and components allows shrinking chip's dimensions at a more-than-Moore rate. Many theoretical limits and manufacturing constraints are yet to be taken into account. A promising path towards nanoelectronics is represented by atomic-scale materials. In this manuscript, we offer a perspective on a specific class of devices, namely switches designed and fabricated using two-dimensional or nanoscale materials, like graphene, molybdenum disulphide, hexagonal boron nitride and ultra-thin oxides for high-frequency applications. An overview is provided about three main types of microwave and millimeter-wave switch: filament memristors, nano-ionic memristors and ferroelectric junctions. The physical principles that govern each switch are presented, together with advantages and disadvantages. In the last part we focus on zirconium-doped hafnium oxide ferroelectrics (HfZrO) tunneling junctions (FTJ), which are likely to boost the research in the domain of atomic-scale materials applied in engineering sciences. Thanks to their Complementary Metal-Oxide Semiconductor (CMOS) compatibility and low-voltage tunability (among other unique physical properties), HfZrO compounds have the potential for large-scale applicability. As a practical case of study, we present a 10 GHz transceiver in which the switches are FTJs, which guarantee excellent isolation and ultra-fast switching time. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Links:
  – Type: pdflink
Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 149557460
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Dragoman%2C+Mircea%22">Dragoman, Mircea</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> martino.aldrigo@imt.ro</i><br /><searchLink fieldCode="AR" term="%22Aldrigo%2C+Martino%22">Aldrigo, Martino</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dragoman%2C+Daniela%22">Dragoman, Daniela</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<i> daniela.dragoman@unibuc.ro</i><br /><searchLink fieldCode="AR" term="%22Fanciulli%2C+Marco%22">Fanciulli, Marco</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lofland%2C+Sam%22">Lofland, Sam</searchLink> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Drazic%2C+Goran%22">Drazic, Goran</searchLink> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Mar2021, Vol. 11 Issue 3, p625-625. 1p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Nanostructured+materials%22">Nanostructured materials</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+equipment%22">Electronic equipment</searchLink><br /><searchLink fieldCode="DE" term="%22Molybdenum+disulfide%22">Molybdenum disulfide</searchLink><br /><searchLink fieldCode="DE" term="%22Hafnium+oxide%22">Hafnium oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Memristors%22">Memristors</searchLink><br /><searchLink fieldCode="DE" term="%22Boron+nitride%22">Boron nitride</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Nanomaterials science is becoming the foundation stone of high-frequency applications. The downscaling of electronic devices and components allows shrinking chip's dimensions at a more-than-Moore rate. Many theoretical limits and manufacturing constraints are yet to be taken into account. A promising path towards nanoelectronics is represented by atomic-scale materials. In this manuscript, we offer a perspective on a specific class of devices, namely switches designed and fabricated using two-dimensional or nanoscale materials, like graphene, molybdenum disulphide, hexagonal boron nitride and ultra-thin oxides for high-frequency applications. An overview is provided about three main types of microwave and millimeter-wave switch: filament memristors, nano-ionic memristors and ferroelectric junctions. The physical principles that govern each switch are presented, together with advantages and disadvantages. In the last part we focus on zirconium-doped hafnium oxide ferroelectrics (HfZrO) tunneling junctions (FTJ), which are likely to boost the research in the domain of atomic-scale materials applied in engineering sciences. Thanks to their Complementary Metal-Oxide Semiconductor (CMOS) compatibility and low-voltage tunability (among other unique physical properties), HfZrO compounds have the potential for large-scale applicability. As a practical case of study, we present a 10 GHz transceiver in which the switches are FTJs, which guarantee excellent isolation and ultra-fast switching time. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=149557460
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/nano11030625
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: 625
    Subjects:
      – SubjectFull: Nanostructured materials
        Type: general
      – SubjectFull: Electronic equipment
        Type: general
      – SubjectFull: Molybdenum disulfide
        Type: general
      – SubjectFull: Hafnium oxide
        Type: general
      – SubjectFull: Memristors
        Type: general
      – SubjectFull: Boron nitride
        Type: general
    Titles:
      – TitleFull: Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Dragoman, Mircea
      – PersonEntity:
          Name:
            NameFull: Aldrigo, Martino
      – PersonEntity:
          Name:
            NameFull: Dragoman, Daniela
      – PersonEntity:
          Name:
            NameFull: Fanciulli, Marco
      – PersonEntity:
          Name:
            NameFull: Lofland, Sam
      – PersonEntity:
          Name:
            NameFull: Drazic, Goran
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar2021
              Type: published
              Y: 2021
          Identifiers:
            – Type: issn-print
              Value: 20794991
          Numbering:
            – Type: volume
              Value: 11
            – Type: issue
              Value: 3
          Titles:
            – TitleFull: Nanomaterials (2079-4991)
              Type: main
ResultId 1