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Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings.

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Title: Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings.
Authors: Tang, Yongjun1,2 (AUTHOR) xjsun2018@sinano.ac.cn, Feng, Meixin1,2,3 (AUTHOR) jxliu2018@sinano.ac.cn, Liu, Jianxun1,2,3 (AUTHOR) szfan2020@sinano.ac.cn, Fan, Shizhao1,2 (AUTHOR) smzhang2010@sinano.ac.cn, Sun, Xiujian2,3 (AUTHOR), Sun, Qian1,2,3 (AUTHOR) hyang2006@sinano.ac.cn, Zhang, Shuming1,2,3 (AUTHOR), Liu, Tong4 (AUTHOR) tliu2015@sinano.ac.cn, Kong, Yaping4 (AUTHOR) ypkong2020@sinano.ac.cn, Huang, Zengli4 (AUTHOR) zlhuang2008@sinano.ac.cn, Ikeda, Masao2 (AUTHOR), Yang, Hui1,2,3,4 (AUTHOR)
Source: Nanomaterials (2079-4991). Nov2021, Vol. 11 Issue 11, p3092-3092. 1p.
Subjects: Quantum cascade lasers, Semiconductor lasers, Stray currents, Plasma etching, Ammonium hydroxide, Distributed feedback lasers
Abstract: This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of gratings, we employed only a few precisely defined slot gratings to narrow the linewidth and mitigate the negative effects of grating fabrication on the device performance. The slot gratings were incorporated into the ridge of conventional Fabry-Pérot cavity laser diodes. A subsequent wet etching in a tetramethyl ammonium hydroxide solution not only effectively removed the damages induced by the dry etching, but also converted the rough and tilted slot sidewalls into smooth and vertical ones. As a result, the threshold current was reduced by over 20%, and the reverse leakage current was decreased by over three orders of magnitude. Therefore, the room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diode has been successfully demonstrated. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
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  Data: Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings.
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  Data: <searchLink fieldCode="AR" term="%22Tang%2C+Yongjun%22">Tang, Yongjun</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> xjsun2018@sinano.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Feng%2C+Meixin%22">Feng, Meixin</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> jxliu2018@sinano.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Liu%2C+Jianxun%22">Liu, Jianxun</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> szfan2020@sinano.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Fan%2C+Shizhao%22">Fan, Shizhao</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> smzhang2010@sinano.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Sun%2C+Xiujian%22">Sun, Xiujian</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sun%2C+Qian%22">Sun, Qian</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> hyang2006@sinano.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Shuming%22">Zhang, Shuming</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Tong%22">Liu, Tong</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> tliu2015@sinano.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Kong%2C+Yaping%22">Kong, Yaping</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> ypkong2020@sinano.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Huang%2C+Zengli%22">Huang, Zengli</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> zlhuang2008@sinano.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Ikeda%2C+Masao%22">Ikeda, Masao</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Hui%22">Yang, Hui</searchLink><relatesTo>1,2,3,4</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Nov2021, Vol. 11 Issue 11, p3092-3092. 1p.
– Name: Subject
  Label: Subjects
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  Data: <searchLink fieldCode="DE" term="%22Quantum+cascade+lasers%22">Quantum cascade lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+lasers%22">Semiconductor lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Stray+currents%22">Stray currents</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+etching%22">Plasma etching</searchLink><br /><searchLink fieldCode="DE" term="%22Ammonium+hydroxide%22">Ammonium hydroxide</searchLink><br /><searchLink fieldCode="DE" term="%22Distributed+feedback+lasers%22">Distributed feedback lasers</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of gratings, we employed only a few precisely defined slot gratings to narrow the linewidth and mitigate the negative effects of grating fabrication on the device performance. The slot gratings were incorporated into the ridge of conventional Fabry-Pérot cavity laser diodes. A subsequent wet etching in a tetramethyl ammonium hydroxide solution not only effectively removed the damages induced by the dry etching, but also converted the rough and tilted slot sidewalls into smooth and vertical ones. As a result, the threshold current was reduced by over 20%, and the reverse leakage current was decreased by over three orders of magnitude. Therefore, the room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diode has been successfully demonstrated. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=153897957
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      – Type: doi
        Value: 10.3390/nano11113092
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 1
        StartPage: 3092
    Subjects:
      – SubjectFull: Quantum cascade lasers
        Type: general
      – SubjectFull: Semiconductor lasers
        Type: general
      – SubjectFull: Stray currents
        Type: general
      – SubjectFull: Plasma etching
        Type: general
      – SubjectFull: Ammonium hydroxide
        Type: general
      – SubjectFull: Distributed feedback lasers
        Type: general
    Titles:
      – TitleFull: Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings.
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            – D: 01
              M: 11
              Text: Nov2021
              Type: published
              Y: 2021
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