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An insight into the performance analysis of GAA MOSFET for different dielectrics at cryogenic temperatures.

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Title: An insight into the performance analysis of GAA MOSFET for different dielectrics at cryogenic temperatures.
Authors: Mahidhar, Kukumani1 (AUTHOR), Rooban, S.1 (AUTHOR), Tayal, Shubham2 (AUTHOR), Jena, Biswajit1 (AUTHOR) biswajit18590@gmail.com
Source: Cryogenics. Mar2022, Vol. 122, pN.PAG-N.PAG. 1p.
Subjects: Metal oxide semiconductor field-effect transistors, Threshold voltage, Dielectrics
Abstract: • Cylindrical gate GAA MOSFET is designed and simulated to get improved electrostatic controllability. • A temperature variation between 70 K and 800 K has been taken and the corresponding effect on device performance is observed. • The transfer characteristics and output characteristics were observed in order to get perfect switching ratio. • Further the threshold voltage is extracted using transconductance method and the effect due to temperature variation is analyzed. A 60 nm gate length, n-type Gate all around (GAA) metal oxide semiconductor field effect transistor (MOSFET) is simulated at different temperature. The temperature dependent electrical characteristics for various temperature are investigated extensively. The improved gate controllability in lower technology node as well as immunity against short channel effects are thoroughly examined. This paper also includes the analog performance analysis of GAA MOSFET along with the DC performances. The performance matrix of the device for different temperature ranging from 70 K to 800 K were illustrated clearly. Results exhibit that the drain current, transconductance, device gain and transconductance to drain current ratio (gm/Ids) improves when temperature is decreased. [ABSTRACT FROM AUTHOR]
Copyright of Cryogenics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: An insight into the performance analysis of GAA MOSFET for different dielectrics at cryogenic temperatures.
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  Data: <searchLink fieldCode="AR" term="%22Mahidhar%2C+Kukumani%22">Mahidhar, Kukumani</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Rooban%2C+S%2E%22">Rooban, S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tayal%2C+Shubham%22">Tayal, Shubham</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jena%2C+Biswajit%22">Jena, Biswajit</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> biswajit18590@gmail.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Cryogenics%22">Cryogenics</searchLink>. Mar2022, Vol. 122, pN.PAG-N.PAG. 1p.
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– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: • Cylindrical gate GAA MOSFET is designed and simulated to get improved electrostatic controllability. • A temperature variation between 70 K and 800 K has been taken and the corresponding effect on device performance is observed. • The transfer characteristics and output characteristics were observed in order to get perfect switching ratio. • Further the threshold voltage is extracted using transconductance method and the effect due to temperature variation is analyzed. A 60 nm gate length, n-type Gate all around (GAA) metal oxide semiconductor field effect transistor (MOSFET) is simulated at different temperature. The temperature dependent electrical characteristics for various temperature are investigated extensively. The improved gate controllability in lower technology node as well as immunity against short channel effects are thoroughly examined. This paper also includes the analog performance analysis of GAA MOSFET along with the DC performances. The performance matrix of the device for different temperature ranging from 70 K to 800 K were illustrated clearly. Results exhibit that the drain current, transconductance, device gain and transconductance to drain current ratio (gm/Ids) improves when temperature is decreased. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Cryogenics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.cryogenics.2022.103425
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      – Code: eng
        Text: English
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        Type: general
      – SubjectFull: Threshold voltage
        Type: general
      – SubjectFull: Dielectrics
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      – TitleFull: An insight into the performance analysis of GAA MOSFET for different dielectrics at cryogenic temperatures.
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            – D: 01
              M: 03
              Text: Mar2022
              Type: published
              Y: 2022
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