A Modified Wet Transfer Method for Eliminating Interfacial Impurities in Graphene.
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| Title: | A Modified Wet Transfer Method for Eliminating Interfacial Impurities in Graphene. |
|---|---|
| Authors: | Jang, Dong Jin1 (AUTHOR), Haidari, Mohd Musaib1 (AUTHOR), Kim, Jin Hong1 (AUTHOR), Ko, Jin-Yong1 (AUTHOR), Yi, Yoonsik2 (AUTHOR), Choi, Jin Sik1 (AUTHOR) jinschoi@konkuk.ac.kr |
| Source: | Nanomaterials (2079-4991). May2023, Vol. 13 Issue 9, p1494. 11p. |
| Subjects: | Graphene, Chemical vapor deposition, Hall effect, Raman microscopy, Electric lines, Graphene oxide |
| Abstract: | Graphene has immense potential as a material for electronic devices owing to its unique electrical properties. However, large-area graphene produced by chemical vapor deposition (CVD) must be transferred from the as-grown copper substrate to an arbitrary substrate for device fabrication. The conventional wet transfer technique, which uses FeCl3 as a Cu etchant, leaves microscale impurities from the substrate, and the etchant adheres to graphene, thereby degrading its electrical performance. To address this limitation, this study introduces a modified transfer process that utilizes a temporary UV-treated SiO2 substrate to adsorb impurities from graphene before transferring it onto the final substrate. Optical microscopy and Raman mapping confirmed the adhesion of impurities to the temporary substrate, leading to a clean graphene/substrate interface. The retransferred graphene shows a reduction in electron–hole asymmetry and sheet resistance compared to conventionally transferred graphene, as confirmed by the transmission line model (TLM) and Hall effect measurements (HEMs). These results indicate that only the substrate effects remain in action in the retransferred graphene, and most of the effects of the impurities are eliminated. Overall, the modified transfer process is a promising method for obtaining high-quality graphene suitable for industrial-scale utilization in electronic devices. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 163687627 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: A Modified Wet Transfer Method for Eliminating Interfacial Impurities in Graphene. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Jang%2C+Dong+Jin%22">Jang, Dong Jin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Haidari%2C+Mohd+Musaib%22">Haidari, Mohd Musaib</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Jin+Hong%22">Kim, Jin Hong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ko%2C+Jin-Yong%22">Ko, Jin-Yong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yi%2C+Yoonsik%22">Yi, Yoonsik</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Choi%2C+Jin+Sik%22">Choi, Jin Sik</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jinschoi@konkuk.ac.kr</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. May2023, Vol. 13 Issue 9, p1494. 11p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Hall+effect%22">Hall effect</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+microscopy%22">Raman microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+lines%22">Electric lines</searchLink><br /><searchLink fieldCode="DE" term="%22Graphene+oxide%22">Graphene oxide</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Graphene has immense potential as a material for electronic devices owing to its unique electrical properties. However, large-area graphene produced by chemical vapor deposition (CVD) must be transferred from the as-grown copper substrate to an arbitrary substrate for device fabrication. The conventional wet transfer technique, which uses FeCl3 as a Cu etchant, leaves microscale impurities from the substrate, and the etchant adheres to graphene, thereby degrading its electrical performance. To address this limitation, this study introduces a modified transfer process that utilizes a temporary UV-treated SiO2 substrate to adsorb impurities from graphene before transferring it onto the final substrate. Optical microscopy and Raman mapping confirmed the adhesion of impurities to the temporary substrate, leading to a clean graphene/substrate interface. The retransferred graphene shows a reduction in electron–hole asymmetry and sheet resistance compared to conventionally transferred graphene, as confirmed by the transmission line model (TLM) and Hall effect measurements (HEMs). These results indicate that only the substrate effects remain in action in the retransferred graphene, and most of the effects of the impurities are eliminated. Overall, the modified transfer process is a promising method for obtaining high-quality graphene suitable for industrial-scale utilization in electronic devices. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano13091494 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 1494 Subjects: – SubjectFull: Graphene Type: general – SubjectFull: Chemical vapor deposition Type: general – SubjectFull: Hall effect Type: general – SubjectFull: Raman microscopy Type: general – SubjectFull: Electric lines Type: general – SubjectFull: Graphene oxide Type: general Titles: – TitleFull: A Modified Wet Transfer Method for Eliminating Interfacial Impurities in Graphene. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Jang, Dong Jin – PersonEntity: Name: NameFull: Haidari, Mohd Musaib – PersonEntity: Name: NameFull: Kim, Jin Hong – PersonEntity: Name: NameFull: Ko, Jin-Yong – PersonEntity: Name: NameFull: Yi, Yoonsik – PersonEntity: Name: NameFull: Choi, Jin Sik IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 13 – Type: issue Value: 9 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
| ResultId | 1 |
