Non-linear optical properties of Sb doped InSe4 chalcogenide films for optical switching applications.
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| Title: | Non-linear optical properties of Sb doped InSe |
|---|---|
| Authors: | Yadav, Kavita1 (AUTHOR) kavita160781056gjuh@gmail.com, Sangwan, Reetu1 (AUTHOR), Poonam1 (AUTHOR), Mohan, Devendra1 (AUTHOR), Sanghi, Sujata1 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. May2023, Vol. 34 Issue 14, p1-10. 10p. |
| Abstract: | The present research work emphases on the laser-induced third-order optical nonlinearity in Sb-doped In-Se chalcogenide glassy semiconducting films, utilizing the Z-scan measurement at a wavelength of 800 nm. The semi-crystalline behaviour of the doped films is caused by nucleation growth. As a light source, the mode-locked femtosecond Ti: Sapphire laser is used to calculate the non-linear index of refraction (n2), intensity-dependent absorption coefficient, and non-linear susceptibility using the Z-scan method. The all-optical switches operating at 1330 nm and 1550 nm telecommunication wavelengths would be anticipated to utilize materials with a low non-linear absorption coefficient (β) and a high non-linear refractive index (n2). [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 163780355 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Non-linear optical properties of Sb doped InSe<subscript>4</subscript> chalcogenide films for optical switching applications. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Yadav%2C+Kavita%22">Yadav, Kavita</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> kavita160781056gjuh@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Sangwan%2C+Reetu%22">Sangwan, Reetu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Poonam%22">Poonam</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mohan%2C+Devendra%22">Mohan, Devendra</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sanghi%2C+Sujata%22">Sanghi, Sujata</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. May2023, Vol. 34 Issue 14, p1-10. 10p. – Name: Abstract Label: Abstract Group: Ab Data: The present research work emphases on the laser-induced third-order optical nonlinearity in Sb-doped In-Se chalcogenide glassy semiconducting films, utilizing the Z-scan measurement at a wavelength of 800 nm. The semi-crystalline behaviour of the doped films is caused by nucleation growth. As a light source, the mode-locked femtosecond Ti: Sapphire laser is used to calculate the non-linear index of refraction (n2), intensity-dependent absorption coefficient, and non-linear susceptibility using the Z-scan method. The all-optical switches operating at 1330 nm and 1550 nm telecommunication wavelengths would be anticipated to utilize materials with a low non-linear absorption coefficient (β) and a high non-linear refractive index (n2). [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-023-10559-8 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 1 Titles: – TitleFull: Non-linear optical properties of Sb doped InSe4 chalcogenide films for optical switching applications. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Yadav, Kavita – PersonEntity: Name: NameFull: Sangwan, Reetu – PersonEntity: Name: NameFull: Poonam – PersonEntity: Name: NameFull: Mohan, Devendra – PersonEntity: Name: NameFull: Sanghi, Sujata IsPartOfRelationships: – BibEntity: Dates: – D: 11 M: 05 Text: May2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 34 – Type: issue Value: 14 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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