Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna.
Saved in:
| Title: | Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna. |
|---|---|
| Authors: | Abidi, E.1 (AUTHOR) atif.khan@usal.es, Khan, A.1 (AUTHOR) juanandn@usal.es, Delgado-Notario, J. A.1 (AUTHOR) vito_clerico@usal.es, Clericó, V.1 (AUTHOR) jaime.calvo@usal.es, Calvo-Gallego, J.1 (AUTHOR) js@usal.es, Taniguchi, T.2 (AUTHOR) taniguchi.takashi@nims.go.jp, Watanabe, K.2 (AUTHOR) watanabe.kenji.aml@nims.go.jp, Otsuji, T.3 (AUTHOR) otsuji@riec.tohoku.ac.jp, Velázquez, J. E.1 (AUTHOR), Meziani, Y. M.1 (AUTHOR) elhadjabidi@usal.es |
| Source: | Nanomaterials (2079-4991). Feb2024, Vol. 14 Issue 4, p383. 12p. |
| Subjects: | Bow-tie antennas, Terahertz materials, Field-effect transistors, Graphene, Antennas (Electronics), Indium gallium zinc oxide |
| Abstract: | An asymmetric dual-grating gate bilayer graphene-based field effect transistor (ADGG-GFET) with an integrated bowtie antenna was fabricated and its response as a Terahertz (THz) detector was experimentally investigated. The device was cooled down to 4.5 K, and excited at different frequencies (0.15, 0.3 and 0.6 THz) using a THz solid-state source. The integration of the bowtie antenna allowed to obtain a substantial increase in the photocurrent response (up to 8 nA) of the device at the three studied frequencies as compared to similar transistors lacking the integrated antenna (1 nA). The photocurrent increase was observed for all the studied values of the bias voltage applied to both the top and back gates. Besides the action of the antenna that helps the coupling of THz radiation to the transistor channel, the observed enhancement by nearly one order of magnitude of the photoresponse is also related to the modulation of the hole and electron concentration profiles inside the transistor channel by the bias voltages imposed to the top and back gates. The creation of local n and p regions leads to the formation of homojuctions ( n p , p n or p p + ) along the channel that strongly affects the overall photoresponse of the detector. Additionally, the bias of both back and top gates could induce an opening of the gap of the bilayer graphene channel that would also contribute to the photocurrent. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| FullText | Links: – Type: pdflink Text: Availability: 1 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 175654398 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Abidi%2C+E%2E%22">Abidi, E.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> atif.khan@usal.es</i><br /><searchLink fieldCode="AR" term="%22Khan%2C+A%2E%22">Khan, A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> juanandn@usal.es</i><br /><searchLink fieldCode="AR" term="%22Delgado-Notario%2C+J%2E+A%2E%22">Delgado-Notario, J. A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> vito_clerico@usal.es</i><br /><searchLink fieldCode="AR" term="%22Clericó%2C+V%2E%22">Clericó, V.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jaime.calvo@usal.es</i><br /><searchLink fieldCode="AR" term="%22Calvo-Gallego%2C+J%2E%22">Calvo-Gallego, J.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> js@usal.es</i><br /><searchLink fieldCode="AR" term="%22Taniguchi%2C+T%2E%22">Taniguchi, T.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> taniguchi.takashi@nims.go.jp</i><br /><searchLink fieldCode="AR" term="%22Watanabe%2C+K%2E%22">Watanabe, K.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> watanabe.kenji.aml@nims.go.jp</i><br /><searchLink fieldCode="AR" term="%22Otsuji%2C+T%2E%22">Otsuji, T.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> otsuji@riec.tohoku.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Velázquez%2C+J%2E+E%2E%22">Velázquez, J. E.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Meziani%2C+Y%2E+M%2E%22">Meziani, Y. M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> elhadjabidi@usal.es</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Feb2024, Vol. 14 Issue 4, p383. 12p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Bow-tie+antennas%22">Bow-tie antennas</searchLink><br /><searchLink fieldCode="DE" term="%22Terahertz+materials%22">Terahertz materials</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink><br /><searchLink fieldCode="DE" term="%22Antennas+%28Electronics%29%22">Antennas (Electronics)</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+gallium+zinc+oxide%22">Indium gallium zinc oxide</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: An asymmetric dual-grating gate bilayer graphene-based field effect transistor (ADGG-GFET) with an integrated bowtie antenna was fabricated and its response as a Terahertz (THz) detector was experimentally investigated. The device was cooled down to 4.5 K, and excited at different frequencies (0.15, 0.3 and 0.6 THz) using a THz solid-state source. The integration of the bowtie antenna allowed to obtain a substantial increase in the photocurrent response (up to 8 nA) of the device at the three studied frequencies as compared to similar transistors lacking the integrated antenna (1 nA). The photocurrent increase was observed for all the studied values of the bias voltage applied to both the top and back gates. Besides the action of the antenna that helps the coupling of THz radiation to the transistor channel, the observed enhancement by nearly one order of magnitude of the photoresponse is also related to the modulation of the hole and electron concentration profiles inside the transistor channel by the bias voltages imposed to the top and back gates. The creation of local n and p regions leads to the formation of homojuctions ( n p , p n or p p + ) along the channel that strongly affects the overall photoresponse of the detector. Additionally, the bias of both back and top gates could induce an opening of the gap of the bilayer graphene channel that would also contribute to the photocurrent. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=175654398 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano14040383 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 383 Subjects: – SubjectFull: Bow-tie antennas Type: general – SubjectFull: Terahertz materials Type: general – SubjectFull: Field-effect transistors Type: general – SubjectFull: Graphene Type: general – SubjectFull: Antennas (Electronics) Type: general – SubjectFull: Indium gallium zinc oxide Type: general Titles: – TitleFull: Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Abidi, E. – PersonEntity: Name: NameFull: Khan, A. – PersonEntity: Name: NameFull: Delgado-Notario, J. A. – PersonEntity: Name: NameFull: Clericó, V. – PersonEntity: Name: NameFull: Calvo-Gallego, J. – PersonEntity: Name: NameFull: Taniguchi, T. – PersonEntity: Name: NameFull: Watanabe, K. – PersonEntity: Name: NameFull: Otsuji, T. – PersonEntity: Name: NameFull: Velázquez, J. E. – PersonEntity: Name: NameFull: Meziani, Y. M. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 02 Text: Feb2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 14 – Type: issue Value: 4 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
| ResultId | 1 |
