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The first batch of compensated LGAD sensors.

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Title: The first batch of compensated LGAD sensors.
Authors: Sola, V.1,2 (AUTHOR) valentina.sola@unito.it, Paternoster, G.3,4 (AUTHOR), Morozzi, A.5 (AUTHOR), Arcidiacono, R.2,6 (AUTHOR), Barozzi, M.3,4 (AUTHOR), Borghi, G.7 (AUTHOR), Boscardin, M.3,4 (AUTHOR), Cartiglia, N.2 (AUTHOR), Centis Vignali, M.3,4 (AUTHOR), Costa, M.1,2 (AUTHOR), Croci, T.5 (AUTHOR), Ferrero, M.2 (AUTHOR), Fondacci, A.8 (AUTHOR), Ficorella, F.3,4 (AUTHOR), Giordanengo, S.2 (AUTHOR), Hammad Ali, O.3,4 (AUTHOR), Hanna, C.1,2 (AUTHOR), Lanteri, L.1,2 (AUTHOR), Menzio, L.2 (AUTHOR), Moscatelli, F.5,9 (AUTHOR)
Source: Nuclear Instruments & Methods in Physics Research Section A. Jul2024, Vol. 1064, pN.PAG-N.PAG. 1p.
Subjects: Electric transients, Avalanche diodes, Detectors, Charge carriers, Substrates (Materials science), Electron donors, Charge transfer
Abstract: A new development of radiation-resistant silicon sensors is presented. The new sensors exploit the Low-Gain Avalanche Diode (LGAD) technology, with internal multiplication of the charge carriers, in combination with thin substrates, intrinsically less affected by radiation. An innovative design of the gain implant typical of the LGADs has been developed and fabricated, employing the compensation of acceptor and donor dopants to reproduce the effective acceptor doping dose of standard LGAD sensors. At the end of 2022, the Fondazione Bruno Kessler (Italy) delivered the first batch of compensated LGAD sensors on 30 μ m thick p-type epitaxial substrates. Electrical and transient characterisation of the sensors has been performed before and after irradiation up to 5 ⋅ 1015 1 MeV equivalent n/cm 2. The ultimate goal is to develop and produce compensated LGAD sensors that can efficiently operate above fluences of 1017 1 MeV equivalent n/cm 2. [ABSTRACT FROM AUTHOR]
Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
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PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: The first batch of compensated LGAD sensors.
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  Data: <searchLink fieldCode="AR" term="%22Sola%2C+V%2E%22">Sola, V.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> valentina.sola@unito.it</i><br /><searchLink fieldCode="AR" term="%22Paternoster%2C+G%2E%22">Paternoster, G.</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Morozzi%2C+A%2E%22">Morozzi, A.</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Arcidiacono%2C+R%2E%22">Arcidiacono, R.</searchLink><relatesTo>2,6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Barozzi%2C+M%2E%22">Barozzi, M.</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Borghi%2C+G%2E%22">Borghi, G.</searchLink><relatesTo>7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Boscardin%2C+M%2E%22">Boscardin, M.</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cartiglia%2C+N%2E%22">Cartiglia, N.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Centis+Vignali%2C+M%2E%22">Centis Vignali, M.</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Costa%2C+M%2E%22">Costa, M.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Croci%2C+T%2E%22">Croci, T.</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ferrero%2C+M%2E%22">Ferrero, M.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fondacci%2C+A%2E%22">Fondacci, A.</searchLink><relatesTo>8</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ficorella%2C+F%2E%22">Ficorella, F.</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Giordanengo%2C+S%2E%22">Giordanengo, S.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hammad+Ali%2C+O%2E%22">Hammad Ali, O.</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hanna%2C+C%2E%22">Hanna, C.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lanteri%2C+L%2E%22">Lanteri, L.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Menzio%2C+L%2E%22">Menzio, L.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Moscatelli%2C+F%2E%22">Moscatelli, F.</searchLink><relatesTo>5,9</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+A%22">Nuclear Instruments & Methods in Physics Research Section A</searchLink>. Jul2024, Vol. 1064, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Electric+transients%22">Electric transients</searchLink><br /><searchLink fieldCode="DE" term="%22Avalanche+diodes%22">Avalanche diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Detectors%22">Detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+carriers%22">Charge carriers</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+donors%22">Electron donors</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+transfer%22">Charge transfer</searchLink>
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  Data: A new development of radiation-resistant silicon sensors is presented. The new sensors exploit the Low-Gain Avalanche Diode (LGAD) technology, with internal multiplication of the charge carriers, in combination with thin substrates, intrinsically less affected by radiation. An innovative design of the gain implant typical of the LGADs has been developed and fabricated, employing the compensation of acceptor and donor dopants to reproduce the effective acceptor doping dose of standard LGAD sensors. At the end of 2022, the Fondazione Bruno Kessler (Italy) delivered the first batch of compensated LGAD sensors on 30 μ m thick p-type epitaxial substrates. Electrical and transient characterisation of the sensors has been performed before and after irradiation up to 5 ⋅ 1015 1 MeV equivalent n/cm 2. The ultimate goal is to develop and produce compensated LGAD sensors that can efficiently operate above fluences of 1017 1 MeV equivalent n/cm 2. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.nima.2024.169453
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Electric transients
        Type: general
      – SubjectFull: Avalanche diodes
        Type: general
      – SubjectFull: Detectors
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      – SubjectFull: Charge carriers
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      – SubjectFull: Substrates (Materials science)
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      – SubjectFull: Electron donors
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      – SubjectFull: Charge transfer
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              Text: Jul2024
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