The outcomes of Zn doping on the properties of CuO thin films prepared via modified SILAR method and its impact on the performance of CuO-based solar cells using Cd0.4Zn0.6S-ETL and Spiro-OMeTAD-HTL.

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Title: The outcomes of Zn doping on the properties of CuO thin films prepared via modified SILAR method and its impact on the performance of CuO-based solar cells using Cd0.4Zn0.6S-ETL and Spiro-OMeTAD-HTL.
Authors: Daoudi, Othmane1,2 (AUTHOR) othmane.daoudi@uit.ac.ma, Jellal, Ilyass2 (AUTHOR), Haddout, Assiya2 (AUTHOR), Benaicha, Ismail2 (AUTHOR), Nouneh, Khalid2 (AUTHOR), Idiri, Mohamed1 (AUTHOR), Lharch, Mohammed2 (AUTHOR), Fahoume, Mounir2 (AUTHOR)
Source: Journal of Materials Science: Materials in Electronics. Jul2024, Vol. 35 Issue 19, p1-23. 23p.
Abstract: Doping is a highly effective tool for modifying the properties of semiconductor thin films. This study quantitatively examines the effect of zinc (Zn) doping on the physical properties of copper oxide (CuO) thin films prepared using a modified SILAR method. The crystalline structure, morphology and optical properties of the obtained samples were further characterized using X-ray diffraction (XRD), scanning electron microscopy with energy-dispersive X-ray spectroscopy (SEM-EDX), and UV–visible spectrometry. XRD analysis confirmed the inclusion of Zn into the CuO crystal lattice without altering its monoclinic structure, and no secondary phases such as Cu 2 O, Cu(OH) 2 , or ZnO were detected, indicating high-quality films. SEM images reveal that surfaces are uniformly coated, dense and compact with uniform distribution of grains. EDX spectrum and mapping analysis verified the incorporation of Zn atoms into CuO thin films. In addition, the UV–Visible spectroscopy a significantly indicated an increase in transmission and enhanced the bandgap from 1.47 to 1.55 eV with an increase in Zn concentration. The impact of Zn doping on the refractive index and the Urbach energy of CuO nanostructures has been investigated. Zn doping improved the optical properties of the films without trading off the tenorite phase of CuO thin films making them suitable in solar cells applications. Additionally, the impact of Zn-doped CuO on solar cell performance was investigated using the SCAPS-1D program. A novel heterostructure (ITO/Cd 0.4 Zn 0.6 S/Zn:CuO/Spiro-PMeTAD/Au) designed for CuO-based solar cells was analysed. Firstly, Cd 1 - x Zn x S was investigated as a factor affecting the performance of undoped CuO solar cells. Simulation results demonstrated that increasing Zn doping in CuO enhances solar cell efficiency. Finally, the proposed heterostructure design exhibits promising advancements, highlighting the potential for enhancing solar cell efficiency through targeted material doping and precise heterostructure engineering. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: The outcomes of Zn doping on the properties of CuO thin films prepared via modified SILAR method and its impact on the performance of CuO-based solar cells using Cd<subscript>0.4</subscript>Zn<subscript>0.6</subscript>S-ETL and Spiro-OMeTAD-HTL.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Daoudi%2C+Othmane%22">Daoudi, Othmane</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> othmane.daoudi@uit.ac.ma</i><br /><searchLink fieldCode="AR" term="%22Jellal%2C+Ilyass%22">Jellal, Ilyass</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Haddout%2C+Assiya%22">Haddout, Assiya</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Benaicha%2C+Ismail%22">Benaicha, Ismail</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Nouneh%2C+Khalid%22">Nouneh, Khalid</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Idiri%2C+Mohamed%22">Idiri, Mohamed</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lharch%2C+Mohammed%22">Lharch, Mohammed</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fahoume%2C+Mounir%22">Fahoume, Mounir</searchLink><relatesTo>2</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jul2024, Vol. 35 Issue 19, p1-23. 23p.
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Doping is a highly effective tool for modifying the properties of semiconductor thin films. This study quantitatively examines the effect of zinc (Zn) doping on the physical properties of copper oxide (CuO) thin films prepared using a modified SILAR method. The crystalline structure, morphology and optical properties of the obtained samples were further characterized using X-ray diffraction (XRD), scanning electron microscopy with energy-dispersive X-ray spectroscopy (SEM-EDX), and UV–visible spectrometry. XRD analysis confirmed the inclusion of Zn into the CuO crystal lattice without altering its monoclinic structure, and no secondary phases such as Cu 2 O, Cu(OH) 2 , or ZnO were detected, indicating high-quality films. SEM images reveal that surfaces are uniformly coated, dense and compact with uniform distribution of grains. EDX spectrum and mapping analysis verified the incorporation of Zn atoms into CuO thin films. In addition, the UV–Visible spectroscopy a significantly indicated an increase in transmission and enhanced the bandgap from 1.47 to 1.55 eV with an increase in Zn concentration. The impact of Zn doping on the refractive index and the Urbach energy of CuO nanostructures has been investigated. Zn doping improved the optical properties of the films without trading off the tenorite phase of CuO thin films making them suitable in solar cells applications. Additionally, the impact of Zn-doped CuO on solar cell performance was investigated using the SCAPS-1D program. A novel heterostructure (ITO/Cd 0.4 Zn 0.6 S/Zn:CuO/Spiro-PMeTAD/Au) designed for CuO-based solar cells was analysed. Firstly, Cd 1 - x Zn x S was investigated as a factor affecting the performance of undoped CuO solar cells. Simulation results demonstrated that increasing Zn doping in CuO enhances solar cell efficiency. Finally, the proposed heterostructure design exhibits promising advancements, highlighting the potential for enhancing solar cell efficiency through targeted material doping and precise heterostructure engineering. [ABSTRACT FROM AUTHOR]
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  Group: Ab
  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-024-13094-2
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 23
        StartPage: 1
    Titles:
      – TitleFull: The outcomes of Zn doping on the properties of CuO thin films prepared via modified SILAR method and its impact on the performance of CuO-based solar cells using Cd0.4Zn0.6S-ETL and Spiro-OMeTAD-HTL.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Daoudi, Othmane
      – PersonEntity:
          Name:
            NameFull: Jellal, Ilyass
      – PersonEntity:
          Name:
            NameFull: Haddout, Assiya
      – PersonEntity:
          Name:
            NameFull: Benaicha, Ismail
      – PersonEntity:
          Name:
            NameFull: Nouneh, Khalid
      – PersonEntity:
          Name:
            NameFull: Idiri, Mohamed
      – PersonEntity:
          Name:
            NameFull: Lharch, Mohammed
      – PersonEntity:
          Name:
            NameFull: Fahoume, Mounir
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 35
            – Type: issue
              Value: 19
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1