Design and Simulation of 4-State SRAMs Using 4-State Quantum Dot Gate (QDG) FETs.
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| Title: | Design and Simulation of 4-State SRAMs Using 4-State Quantum Dot Gate (QDG) FETs. |
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| Authors: | Khan, B.1 (AUTHOR), Saman, B.2 (AUTHOR), Almalki, A.1 (AUTHOR), Gudlavalleti, R. H.1,3 (AUTHOR), Chandy, J.1 (AUTHOR), Heller, E.4 (AUTHOR), Jain, F. C.1 (AUTHOR) faquir.jain@uconn.edu |
| Source: | International Journal of High Speed Electronics & Systems. Jun-Sep2024, Vol. 33 Issue 2/3, p1-5. 5p. |
| Subjects: | Quantum gates, Quantum dots, Static random access memory, Oxides |
| Abstract: | This paper describes fabrication of Quantum Dot Gate n-FETs using SiOx-cladded Si quantum dot self-assembled on the tunnel gate oxide. Experimental I-V characteristics exhibiting 4-states are presented. Simulation is presented for the operation of viable 4-state SRAMs using QDG-FETs. [ABSTRACT FROM AUTHOR] |
| Copyright of International Journal of High Speed Electronics & Systems is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 179282275 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Design and Simulation of 4-State SRAMs Using 4-State Quantum Dot Gate (QDG) FETs. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Khan%2C+B%2E%22">Khan, B.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Saman%2C+B%2E%22">Saman, B.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Almalki%2C+A%2E%22">Almalki, A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gudlavalleti%2C+R%2E+H%2E%22">Gudlavalleti, R. H.</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chandy%2C+J%2E%22">Chandy, J.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Heller%2C+E%2E%22">Heller, E.</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jain%2C+F%2E+C%2E%22">Jain, F. C.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> faquir.jain@uconn.edu</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22International+Journal+of+High+Speed+Electronics+%26+Systems%22">International Journal of High Speed Electronics & Systems</searchLink>. Jun-Sep2024, Vol. 33 Issue 2/3, p1-5. 5p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Quantum+gates%22">Quantum gates</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+dots%22">Quantum dots</searchLink><br /><searchLink fieldCode="DE" term="%22Static+random+access+memory%22">Static random access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Oxides%22">Oxides</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This paper describes fabrication of Quantum Dot Gate n-FETs using SiOx-cladded Si quantum dot self-assembled on the tunnel gate oxide. Experimental I-V characteristics exhibiting 4-states are presented. Simulation is presented for the operation of viable 4-state SRAMs using QDG-FETs. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of International Journal of High Speed Electronics & Systems is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1142/S0129156424400731 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 1 Subjects: – SubjectFull: Quantum gates Type: general – SubjectFull: Quantum dots Type: general – SubjectFull: Static random access memory Type: general – SubjectFull: Oxides Type: general Titles: – TitleFull: Design and Simulation of 4-State SRAMs Using 4-State Quantum Dot Gate (QDG) FETs. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Khan, B. – PersonEntity: Name: NameFull: Saman, B. – PersonEntity: Name: NameFull: Almalki, A. – PersonEntity: Name: NameFull: Gudlavalleti, R. H. – PersonEntity: Name: NameFull: Chandy, J. – PersonEntity: Name: NameFull: Heller, E. – PersonEntity: Name: NameFull: Jain, F. C. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun-Sep2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 01291564 Numbering: – Type: volume Value: 33 – Type: issue Value: 2/3 Titles: – TitleFull: International Journal of High Speed Electronics & Systems Type: main |
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