APA (7th ed.) Citation

Deng, C., Wang, P., Tang, C., Hu, Q., Du, F., Jiang, Y., . . . Yu, H. (2024). Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineering Technique. Nanomaterials (2079-4991), 14(18), 1471. https://doi.org/10.3390/nano14181471

Chicago Style (17th ed.) Citation

Deng, Chenkai, et al. "Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN X Stress-Engineering Technique." Nanomaterials (2079-4991) 14, no. 18 (2024): 1471. https://doi.org/10.3390/nano14181471.

MLA (9th ed.) Citation

Deng, Chenkai, et al. "Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN X Stress-Engineering Technique." Nanomaterials (2079-4991), vol. 14, no. 18, 2024, p. 1471, https://doi.org/10.3390/nano14181471.