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Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineering Technique.

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Title: Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineering Technique.
Authors: Deng, Chenkai1,2 (AUTHOR) 12149033@mail.sustech.edu.cn, Wang, Peiran2 (AUTHOR) 12231180@mail.sustech.edu.cn, Tang, Chuying1,2 (AUTHOR) 11811803@mail.sustech.edu.cn, Hu, Qiaoyu2 (AUTHOR) 12132453@mail.sustech.edu.cn, Du, Fangzhou2 (AUTHOR) 12132480@mail.sustech.edu.cn, Jiang, Yang3 (AUTHOR) 11510044@mail.sustech.edu.cn, Zhang, Yi3 (AUTHOR) zhangyi97@connect.hku.hk, Li, Mujun2 (AUTHOR) 12231174@mail.sustech.edu.cn, Xiong, Zilong2 (AUTHOR), Wang, Xiaohui2 (AUTHOR), Wen, Kangyao4 (AUTHOR) 22112020122@m.fudan.edu.cn, Li, Wenmao1,2 (AUTHOR) liwm@mail.sustech.edu.cn, Tao, Nick5 (AUTHOR) nick.tao@maxscend.com, Wang, Qing2,6 (AUTHOR) wangq7@sustech.edu.cn, Yu, Hongyu2,6 (AUTHOR) wangq7@sustech.edu.cn
Source: Nanomaterials (2079-4991). Sep2024, Vol. 14 Issue 18, p1471. 9p.
Subjects: Frequencies of oscillating systems, Passivation, Telecommunication systems, Electric fields, Gallium nitride, Modulation-doped field-effect transistors
Abstract: In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiNx stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiNx passivation contributed to the suppression of Fowler–Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V. Moreover, benefiting from enhanced gate control capability, the devices with compressive stress SiNx passivation showed improved peak transconductance from 315 mS/mm to 366 mS/mm, along with a higher cutoff frequency (ft) and maximum oscillation frequency (fmax) of 21.15 GHz and 35.66 GHz, respectively. Due to its enhanced frequency performance and improved pinch-off characteristics, the power performance of the devices with compressive stress SiNx passivation was markedly superior to that of the devices with stress-free SiNx passivation. These results confirm the substantial potential of the SiNx stress-engineered technique for high-frequency and high-output power applications, which are crucial for future communication systems. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineering Technique.
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  Data: <searchLink fieldCode="AR" term="%22Deng%2C+Chenkai%22">Deng, Chenkai</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> 12149033@mail.sustech.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Wang%2C+Peiran%22">Wang, Peiran</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> 12231180@mail.sustech.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Tang%2C+Chuying%22">Tang, Chuying</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> 11811803@mail.sustech.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Hu%2C+Qiaoyu%22">Hu, Qiaoyu</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> 12132453@mail.sustech.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Du%2C+Fangzhou%22">Du, Fangzhou</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> 12132480@mail.sustech.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Jiang%2C+Yang%22">Jiang, Yang</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> 11510044@mail.sustech.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Yi%22">Zhang, Yi</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> zhangyi97@connect.hku.hk</i><br /><searchLink fieldCode="AR" term="%22Li%2C+Mujun%22">Li, Mujun</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> 12231174@mail.sustech.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Xiong%2C+Zilong%22">Xiong, Zilong</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Xiaohui%22">Wang, Xiaohui</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wen%2C+Kangyao%22">Wen, Kangyao</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> 22112020122@m.fudan.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Li%2C+Wenmao%22">Li, Wenmao</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> liwm@mail.sustech.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Tao%2C+Nick%22">Tao, Nick</searchLink><relatesTo>5</relatesTo> (AUTHOR)<i> nick.tao@maxscend.com</i><br /><searchLink fieldCode="AR" term="%22Wang%2C+Qing%22">Wang, Qing</searchLink><relatesTo>2,6</relatesTo> (AUTHOR)<i> wangq7@sustech.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Yu%2C+Hongyu%22">Yu, Hongyu</searchLink><relatesTo>2,6</relatesTo> (AUTHOR)<i> wangq7@sustech.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Sep2024, Vol. 14 Issue 18, p1471. 9p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Frequencies+of+oscillating+systems%22">Frequencies of oscillating systems</searchLink><br /><searchLink fieldCode="DE" term="%22Passivation%22">Passivation</searchLink><br /><searchLink fieldCode="DE" term="%22Telecommunication+systems%22">Telecommunication systems</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+fields%22">Electric fields</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+nitride%22">Gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Modulation-doped+field-effect+transistors%22">Modulation-doped field-effect transistors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiNx stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiNx passivation contributed to the suppression of Fowler–Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V. Moreover, benefiting from enhanced gate control capability, the devices with compressive stress SiNx passivation showed improved peak transconductance from 315 mS/mm to 366 mS/mm, along with a higher cutoff frequency (ft) and maximum oscillation frequency (fmax) of 21.15 GHz and 35.66 GHz, respectively. Due to its enhanced frequency performance and improved pinch-off characteristics, the power performance of the devices with compressive stress SiNx passivation was markedly superior to that of the devices with stress-free SiNx passivation. These results confirm the substantial potential of the SiNx stress-engineered technique for high-frequency and high-output power applications, which are crucial for future communication systems. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/nano14181471
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 1471
    Subjects:
      – SubjectFull: Frequencies of oscillating systems
        Type: general
      – SubjectFull: Passivation
        Type: general
      – SubjectFull: Telecommunication systems
        Type: general
      – SubjectFull: Electric fields
        Type: general
      – SubjectFull: Gallium nitride
        Type: general
      – SubjectFull: Modulation-doped field-effect transistors
        Type: general
    Titles:
      – TitleFull: Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineering Technique.
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            – D: 15
              M: 09
              Text: Sep2024
              Type: published
              Y: 2024
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