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Impact on the structural and photophysical properties of TiO2 films owing to Li implantation.

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Title: Impact on the structural and photophysical properties of TiO2 films owing to Li implantation.
Authors: Mondal, Sulakshana1 (AUTHOR), Das, Amaresh1,2 (AUTHOR), Basak, Durga1 (AUTHOR) sspdb@iacs.res.in
Source: Journal of Materials Science: Materials in Electronics. Dec2024, Vol. 35 Issue 34, p1-12. 12p.
Abstract: We investigated here the effect of defects on the structural and photophysical properties of TiO2 films implanted with Li ions with fluences from 1 × 1014 to 1 × 1015 ions/cm2. All the films showed tetragonal anatase structure but higher angle shift of the (101) peak of implanted films confirms Li doping in Ti site. This result is also supported by our X-Ray photoelectron spectroscopy study. The results also indicated that with an increase in Li ion fluence, formation of defects like oxygen vacancy and/or Ti3+ species increases in implanted samples. This is also supported by theoretical “stopping and range of ions in matter” (SRIM) simulations. The introduction of oxygen vacancy-Ti3+ defects act as recombination centers which gives rise to significant change in emission properties and decrease the photoresponse properties of the TiO2 films after Li implantation. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
  Group: Ti
  Data: Impact on the structural and photophysical properties of TiO<subscript>2</subscript> films owing to Li implantation.
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  Data: <searchLink fieldCode="AR" term="%22Mondal%2C+Sulakshana%22">Mondal, Sulakshana</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Das%2C+Amaresh%22">Das, Amaresh</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Basak%2C+Durga%22">Basak, Durga</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> sspdb@iacs.res.in</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Dec2024, Vol. 35 Issue 34, p1-12. 12p.
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We investigated here the effect of defects on the structural and photophysical properties of TiO2 films implanted with Li ions with fluences from 1 × 1014 to 1 × 1015 ions/cm2. All the films showed tetragonal anatase structure but higher angle shift of the (101) peak of implanted films confirms Li doping in Ti site. This result is also supported by our X-Ray photoelectron spectroscopy study. The results also indicated that with an increase in Li ion fluence, formation of defects like oxygen vacancy and/or Ti3+ species increases in implanted samples. This is also supported by theoretical “stopping and range of ions in matter” (SRIM) simulations. The introduction of oxygen vacancy-Ti3+ defects act as recombination centers which gives rise to significant change in emission properties and decrease the photoresponse properties of the TiO2 films after Li implantation. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1007/s10854-024-13926-1
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      – Code: eng
        Text: English
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      – TitleFull: Impact on the structural and photophysical properties of TiO2 films owing to Li implantation.
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            NameFull: Mondal, Sulakshana
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            NameFull: Das, Amaresh
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            NameFull: Basak, Durga
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            – D: 01
              M: 12
              Text: Dec2024
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              Y: 2024
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