Constructing carbon-defect-rich g-C3N4/In2S3 2D vertically stacked Z-scheme heterojunction for ultrafast photocatalytic Cr(VI) reduction.
Saved in:
| Title: | Constructing carbon-defect-rich g-C3N4/In2S3 2D vertically stacked Z-scheme heterojunction for ultrafast photocatalytic Cr(VI) reduction. |
|---|---|
| Authors: | Wang, Jian1 (AUTHOR), Lin, Chenyang1 (AUTHOR), Chen, Guangyuan1 (AUTHOR), Jiang, Jingjing1 (AUTHOR), Wei, Zheng1 (AUTHOR), Li, Yubao1 (AUTHOR), Zhou, Shijian1 (AUTHOR) zshijian@njtech.edu.cn, Yang, Fu2 (AUTHOR), Kong, Yan1 (AUTHOR) kongy36@njtech.edu.cn |
| Source: | Applied Surface Science. Apr2025, Vol. 687, pN.PAG-N.PAG. 1p. |
| Subjects: | Channels (Hydraulic engineering), Pollution, Photocatalysts, Nanostructured materials, Catalysts, Heterojunctions |
| Abstract: | Herein, for the first time, a 2D vertically stacked Z-scheme g-C 3 N 4 /In 2 S 3 with carbon defects hybrid was constructed and proved to be efficient for photocatalytic Cr(VI) reduction. [Display omitted] • 2D vertically stacked Z-scheme g-C 3 N 4 /In 2 S 3 with carbon defects was constructed. • The catalysts exhibit superior photocatalytic performance for Cr(VI) reduction. • The 2D vertically stacked structure provides more transmission path for carriers. • The Z-scheme system greatly promotes the separation efficiency of charges. • The rich carbon defects would partially reduce the surface inertness of g-C 3 N 4. 2D/2D face-to-face heterojunctions in photocatalyst could promote the migration and separation of carriers to improve photocatalytic properties, however, the accumulation of nanosheets leads to carrier transport needs to pass through a long and winding channel. To further solve this matter, we altered parallel stacking of 2D materials to vertical stacking model, and constructed g-C 3 N 4 /In 2 S 3 2D vertically stacked Z-scheme heterojunction with carbon defects for accelerating the separation and migration of carriers. The optimized 10CNIS photocatalyst exhibits an incredibly rapid photocatalytic conversion of Cr(VI) to Cr(III) under optical light within only 2 min with rate constant of k = 2.054 min−1, nearly 128.4 and 5.1 times faster than pristine g-C 3 N 4 (0.016 min−1) and In 2 S 3 (0.405 min−1). Through mechanism investigation, we demonstrated that the 2D vertically stacked Z-scheme structure could effectively provide more diffusion paths for carriers and simultaneously maintain higher redox ability, which greatly promotes the mobility and reducibility of charge, improves the separation of photoexcited electron-hole pairs. In addition, carbon defects in-situ constructed in the g-C 3 N 4 could partly diminish the surface inertness of g-C 3 N 4 and enhance its interaction with desired reactants. This study offers an imaginative inspiration for developing special 2D vertically stacked Z-scheme photocatalysts to handle the environmental pollution issues. [ABSTRACT FROM AUTHOR] |
| Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
Be the first to leave a comment!
