Identification and Mitigation Strategies of Etch Pit-Associated Defects in MBE-Grown HgCdTe Thin Films: Identification and Mitigation Strategies of Etch-pit-associated: H. Cao et al.
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| Title: | Identification and Mitigation Strategies of Etch Pit-Associated Defects in MBE-Grown HgCdTe Thin Films: Identification and Mitigation Strategies of Etch-pit-associated: H. Cao et al. |
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| Authors: | Cao, Hechun1 (AUTHOR), Zhao, Dongyang1 (AUTHOR), Hu, Tao1 (AUTHOR), Zheng, Yunzhe1 (AUTHOR), Bai, Wei1 (AUTHOR) wbai@mail.sitp.ac.cn, Chen, Yan2 (AUTHOR), Yang, Jing1 (AUTHOR), Zhang, Yuanyuan1 (AUTHOR), Cheng, Yan1 (AUTHOR), Huang, Rong1 (AUTHOR), Tang, Xiaodong1 (AUTHOR) xdtang@sist.ecnu.edu.cn, Wang, Jianlu2 (AUTHOR) jlwang@mail.sitp.ac.cn, Chu, Junhao2 (AUTHOR) |
| Source: | Journal of Electronic Materials. Apr2025, Vol. 54 Issue 4, p2913-2920. 8p. |
| Subjects: | Transmission electron microscopes, Molecular beam epitaxy, Infrared detectors, Scanning electron microscopes, Thin films |
| Abstract: | Hg1-xCdxTe (MCT) is recognized as an ideal material for infrared detector applications due to its superior internal quantum efficiency. However, a minor process deviation can deteriorate the crystal quality because of the extremely harsh epitaxial processes of MCT, leading to a dramatic increase of defect type and density. Here, MCT thin films were grown on lattice-matched CdZnTe substrates by regulating deliberately molecular beam epitaxy (MBE) processes. Two types of etch pit defects with triangular (EP-A) and foliate (EP-B) morphologies have been characterized by scanning electron microscope and transmission electron microscopy. The atomic structural information and origin of the two etch pit microdefects were investigated in detail. The processes of EP-A defects correlated to low growth temperature and Hg pressure, contrary to those of EP-B ones. On the basis of MBE process optimization, extremely high-quality MCT thin films with a low defect density of an average etch pit density less than 3 × 104 cm−2 and full width at half-maximum of only 14.4 arcsec measured by double crystal rocking curve were yielded. The formation mechanisms and mitigation strategies of the defects are detailed, providing a vital guidance for higher-quality MCT infrared detector applications. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 183624058 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Identification and Mitigation Strategies of Etch Pit-Associated Defects in MBE-Grown HgCdTe Thin Films: Identification and Mitigation Strategies of Etch-pit-associated: H. Cao et al. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Cao%2C+Hechun%22">Cao, Hechun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhao%2C+Dongyang%22">Zhao, Dongyang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hu%2C+Tao%22">Hu, Tao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zheng%2C+Yunzhe%22">Zheng, Yunzhe</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bai%2C+Wei%22">Bai, Wei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> wbai@mail.sitp.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Chen%2C+Yan%22">Chen, Yan</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Jing%22">Yang, Jing</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Yuanyuan%22">Zhang, Yuanyuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cheng%2C+Yan%22">Cheng, Yan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Huang%2C+Rong%22">Huang, Rong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tang%2C+Xiaodong%22">Tang, Xiaodong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> xdtang@sist.ecnu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Wang%2C+Jianlu%22">Wang, Jianlu</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> jlwang@mail.sitp.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Chu%2C+Junhao%22">Chu, Junhao</searchLink><relatesTo>2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Apr2025, Vol. 54 Issue 4, p2913-2920. 8p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Transmission+electron+microscopes%22">Transmission electron microscopes</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Infrared+detectors%22">Infrared detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Scanning+electron+microscopes%22">Scanning electron microscopes</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Hg1-xCdxTe (MCT) is recognized as an ideal material for infrared detector applications due to its superior internal quantum efficiency. However, a minor process deviation can deteriorate the crystal quality because of the extremely harsh epitaxial processes of MCT, leading to a dramatic increase of defect type and density. Here, MCT thin films were grown on lattice-matched CdZnTe substrates by regulating deliberately molecular beam epitaxy (MBE) processes. Two types of etch pit defects with triangular (EP-A) and foliate (EP-B) morphologies have been characterized by scanning electron microscope and transmission electron microscopy. The atomic structural information and origin of the two etch pit microdefects were investigated in detail. The processes of EP-A defects correlated to low growth temperature and Hg pressure, contrary to those of EP-B ones. On the basis of MBE process optimization, extremely high-quality MCT thin films with a low defect density of an average etch pit density less than 3 × 104 cm−2 and full width at half-maximum of only 14.4 arcsec measured by double crystal rocking curve were yielded. The formation mechanisms and mitigation strategies of the defects are detailed, providing a vital guidance for higher-quality MCT infrared detector applications. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-025-11772-3 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 2913 Subjects: – SubjectFull: Transmission electron microscopes Type: general – SubjectFull: Molecular beam epitaxy Type: general – SubjectFull: Infrared detectors Type: general – SubjectFull: Scanning electron microscopes Type: general – SubjectFull: Thin films Type: general Titles: – TitleFull: Identification and Mitigation Strategies of Etch Pit-Associated Defects in MBE-Grown HgCdTe Thin Films: Identification and Mitigation Strategies of Etch-pit-associated: H. Cao et al. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Cao, Hechun – PersonEntity: Name: NameFull: Zhao, Dongyang – PersonEntity: Name: NameFull: Hu, Tao – PersonEntity: Name: NameFull: Zheng, Yunzhe – PersonEntity: Name: NameFull: Bai, Wei – PersonEntity: Name: NameFull: Chen, Yan – PersonEntity: Name: NameFull: Yang, Jing – PersonEntity: Name: NameFull: Zhang, Yuanyuan – PersonEntity: Name: NameFull: Cheng, Yan – PersonEntity: Name: NameFull: Huang, Rong – PersonEntity: Name: NameFull: Tang, Xiaodong – PersonEntity: Name: NameFull: Wang, Jianlu – PersonEntity: Name: NameFull: Chu, Junhao IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 54 – Type: issue Value: 4 Titles: – TitleFull: Journal of Electronic Materials Type: main |
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