APA (7th ed.) Citation

Choi, N., Kim, S., & Zhang, S. (2025). Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling. Energies (19961073), 18(10), 2457. https://doi.org/10.3390/en18102457

Chicago Style (17th ed.) Citation

Choi, Na-Yeon, Sang-Gi Kim, and Sung-Uk Zhang. "Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling." Energies (19961073) 18, no. 10 (2025): 2457. https://doi.org/10.3390/en18102457.

MLA (9th ed.) Citation

Choi, Na-Yeon, et al. "Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling." Energies (19961073), vol. 18, no. 10, 2025, p. 2457, https://doi.org/10.3390/en18102457.