View in EDS

A Study on Particle Emission Efficiency of a Plasma Enhanced Chemical Vapor Deposition Chamber During Periodic Cycle Purge Process Using an Improved Single Particle Light Scattering Method.

Saved in:
Bibliographic Details
Title: A Study on Particle Emission Efficiency of a Plasma Enhanced Chemical Vapor Deposition Chamber During Periodic Cycle Purge Process Using an Improved Single Particle Light Scattering Method.
Authors: Kim, Myungjoon1 mj8328.kim@samsung.com, Jang, Minwoo1, Jung, Minchul2, Han, Hyungsun2, Jung, Suyeon2, Song, Yoonbeom2, Jung, Youngsoo1, Kim, Dohyung2, Mun, Jihun3, Min, Byeonghyeon3, Kang, Seunghyon1, Han, Eunyoung1, Oh, Myeonghun1, Jeong Kim, Young1
Source: IEEE Transactions on Semiconductor Manufacturing. Aug2025, Vol. 38 Issue 3, p667-674. 8p.
Subjects: Particle emissions, Plasma-enhanced chemical vapor deposition, Light scattering, Semiconductors, Mass production, Silicon nitride
Abstract: In this study, the periodic purge process of the silicon nitride oxide deposition chamber was quantitatively analyzed and optimized using a real-time contaminant particle sensor (RTCPS). The RTCPS can measure the particle number concentration emitted from the semiconductor process chamber at the foreline in real time. The previous periodic purge process, which used a cycle purge method alternating between showerhead flow on and off, only expelled the accumulated particles in the chamber during the early stages of each cycle. On the other hand, by adding heater movement during the cycle, continuous particle emission was achieved throughout the periodic purge, resulting in improved efficiency. Additionally, the purge time was reduced, leading to increased productivity. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Semiconductor Manufacturing is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 187507495
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: A Study on Particle Emission Efficiency of a Plasma Enhanced Chemical Vapor Deposition Chamber During Periodic Cycle Purge Process Using an Improved Single Particle Light Scattering Method.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Kim%2C+Myungjoon%22">Kim, Myungjoon</searchLink><relatesTo>1</relatesTo><i> mj8328.kim@samsung.com</i><br /><searchLink fieldCode="AR" term="%22Jang%2C+Minwoo%22">Jang, Minwoo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jung%2C+Minchul%22">Jung, Minchul</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Han%2C+Hyungsun%22">Han, Hyungsun</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Jung%2C+Suyeon%22">Jung, Suyeon</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Song%2C+Yoonbeom%22">Song, Yoonbeom</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Jung%2C+Youngsoo%22">Jung, Youngsoo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kim%2C+Dohyung%22">Kim, Dohyung</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Mun%2C+Jihun%22">Mun, Jihun</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Min%2C+Byeonghyeon%22">Min, Byeonghyeon</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Kang%2C+Seunghyon%22">Kang, Seunghyon</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Han%2C+Eunyoung%22">Han, Eunyoung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Oh%2C+Myeonghun%22">Oh, Myeonghun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jeong+Kim%2C+Young%22">Jeong Kim, Young</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Semiconductor+Manufacturing%22">IEEE Transactions on Semiconductor Manufacturing</searchLink>. Aug2025, Vol. 38 Issue 3, p667-674. 8p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Particle+emissions%22">Particle emissions</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma-enhanced+chemical+vapor+deposition%22">Plasma-enhanced chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Light+scattering%22">Light scattering</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Mass+production%22">Mass production</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nitride%22">Silicon nitride</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this study, the periodic purge process of the silicon nitride oxide deposition chamber was quantitatively analyzed and optimized using a real-time contaminant particle sensor (RTCPS). The RTCPS can measure the particle number concentration emitted from the semiconductor process chamber at the foreline in real time. The previous periodic purge process, which used a cycle purge method alternating between showerhead flow on and off, only expelled the accumulated particles in the chamber during the early stages of each cycle. On the other hand, by adding heater movement during the cycle, continuous particle emission was achieved throughout the periodic purge, resulting in improved efficiency. Additionally, the purge time was reduced, leading to increased productivity. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Semiconductor Manufacturing is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=187507495
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/TSM.2025.3572028
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 667
    Subjects:
      – SubjectFull: Particle emissions
        Type: general
      – SubjectFull: Plasma-enhanced chemical vapor deposition
        Type: general
      – SubjectFull: Light scattering
        Type: general
      – SubjectFull: Semiconductors
        Type: general
      – SubjectFull: Mass production
        Type: general
      – SubjectFull: Silicon nitride
        Type: general
    Titles:
      – TitleFull: A Study on Particle Emission Efficiency of a Plasma Enhanced Chemical Vapor Deposition Chamber During Periodic Cycle Purge Process Using an Improved Single Particle Light Scattering Method.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kim, Myungjoon
      – PersonEntity:
          Name:
            NameFull: Jang, Minwoo
      – PersonEntity:
          Name:
            NameFull: Jung, Minchul
      – PersonEntity:
          Name:
            NameFull: Han, Hyungsun
      – PersonEntity:
          Name:
            NameFull: Jung, Suyeon
      – PersonEntity:
          Name:
            NameFull: Song, Yoonbeom
      – PersonEntity:
          Name:
            NameFull: Jung, Youngsoo
      – PersonEntity:
          Name:
            NameFull: Kim, Dohyung
      – PersonEntity:
          Name:
            NameFull: Mun, Jihun
      – PersonEntity:
          Name:
            NameFull: Min, Byeonghyeon
      – PersonEntity:
          Name:
            NameFull: Kang, Seunghyon
      – PersonEntity:
          Name:
            NameFull: Han, Eunyoung
      – PersonEntity:
          Name:
            NameFull: Oh, Myeonghun
      – PersonEntity:
          Name:
            NameFull: Jeong Kim, Young
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 08
              Text: Aug2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 08946507
          Numbering:
            – Type: volume
              Value: 38
            – Type: issue
              Value: 3
          Titles:
            – TitleFull: IEEE Transactions on Semiconductor Manufacturing
              Type: main
ResultId 1