The effect of (In3+, Ta5+) co-dopant on dielectric properties and nonlinear characteristics of Bi2/3Cu3Ti4O12 ceramics.
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| Title: | The effect of (In3+, Ta5+) co-dopant on dielectric properties and nonlinear characteristics of Bi2/3Cu3Ti4O12 ceramics. |
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| Authors: | Yang, Longhai1,2 (AUTHOR) ylonghai@hotmail.com, Chen, Shijie1,2 (AUTHOR), Gao, Wenjie1,2 (AUTHOR), Wu, Fengjuan1,2 (AUTHOR), Zhang, Jingyuan1,2 (AUTHOR), Zhang, Tao1,3 (AUTHOR) tzhang@xust.edu.cn |
| Source: | Ceramics International. Nov2025:Part C, Vol. 51 Issue 26, p50975-50984. 10p. |
| Subjects: | Dielectric properties, Nonlinear mechanics, Doping agents (Chemistry), Impedance spectroscopy, Tantalum, Ceramics, Ceramic materials |
| Abstract: | Bi 2/3 Cu 3 Ti 4 O 12 , Bi 2/3 Cu 3 Ti 3.995 In 0.005 O 12 , Bi 2/3 Cu 3 Ti 3.995 Ta 0.005 O 12 , and Bi 2/3 Cu 3 Ti 4− x (In 0.5 Ta 0.5) x O 12 (x = 0.005, 0.01, 0.02, 0.04, and 0.08) ceramics were successfully prepared using traditional solid-phase methods. At 1 kHz, the dielectric constant and dielectric loss of all samples are 54902 and 0.3345 (Bi 2/3 Cu 3 Ti 4 O 12), 62501 and 0.3152 (Bi 2/3 Cu 3 Ti 3.995 In 0.005 O 12), 1100.2 and 0.2325 (Bi 2/3 Cu 3 Ti 3.995 Ta 0.005 O 12), 857.95 and 0.212 (Bi 2/3 Cu 3 Ti 4− x (In 0.5 Ta 0.5) x O 12 with x = 0.005), 3789.6 and 0.3145 (Bi 2/3 Cu 3 Ti 4− x (In 0.5 Ta 0.5) x O 12 with x = 0.01), 75505 and 0.1079 (Bi 2/3 Cu 3 Ti 4− x (In 0.5 Ta 0.5) x O 12 with x = 0.02), 80511 and 0.095 (Bi 2/3 Cu 3 Ti 4− x (In 0.5 Ta 0.5) x O 12 with x = 0.04), and 67487 and 0.1142 (Bi 2/3 Cu 3 Ti 4− x (In 0.5 Ta 0.5) x O 12 with x = 0.08), respectively. The dielectric constant gradually increases with the increase in co-doping amount, while the dielectric loss decreases. High breakdown field strength (E b = 10.37 kV/cm) and high nonlinearity coefficient (α = 5.7) are obtained for x = 0.005. The dielectric constant and dielectric loss of different sputtered electrodes were measured to confirm that electrodes have an effect across the entire frequency band investigated. The analysis of the complex impedance spectra indicates that the colossal dielectric permittivity observed in the mid-frequency range for all ceramic samples can be attributed to the internal barrier layer capacitance effect. The lattice constants, Cu–O bond lengths, Ti–O bond lengths, and Ti–O–Ti bond angles of all Bi 2/3 Cu 3 Ti 4− x (In 0.5 Ta 0.5) x O 12 ceramics were obtained via the X-ray diffraction Rietveld refinement technique. From these results combined with X-ray photoelectron spectroscopy analyses, it is concluded that the electron pinned defect dipole effect, which arises from the defect dipole composite structure of the ceramics, is attributed to the increase in dielectric constant and decrease in dielectric loss at intermediate frequencies. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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