View in EDS HTML Full Text PDF Full Text

Formation of Fluorine Vacancy (FV) Centers in Diamond.

Saved in:
Bibliographic Details
Title: Formation of Fluorine Vacancy (FV) Centers in Diamond.
Authors: Puthirath, Anand B.1 (AUTHOR) jle2@rice.edu, Elkins, Jacob1,2 (AUTHOR), Kannan, Harikishan1,3 (AUTHOR), Horne, Alyssa2,4 (AUTHOR), Chen, Jia-Shiang3,4,5 (AUTHOR), Zhang, Hao5,6 (AUTHOR), Khabashesku, Valery N.1,7 (AUTHOR), Biswas, Abhijit1,8 (AUTHOR), Zhang, Xiang1 (AUTHOR), Birdwell, A. Glen2,7 (AUTHOR), Ivanov, Tony G.3,7 (AUTHOR), Kentsch, Ulrich4,8 (AUTHOR), Akhmadaliev, Shavkat5,8 (AUTHOR), Vajtai, Robert1,6 (AUTHOR), Ma, Xuedan1,3,7 (AUTHOR), Mohite, Aditya D.5,8 (AUTHOR), Pati, Ranjit2 (AUTHOR) patir@mtu.edu, Ajayan, Pulickel M.1 (AUTHOR) ajayan@rice.edu
Source: Materials (1996-1944). Feb2026, Vol. 19 Issue 3, p494. 10p.
Subjects: Ion implantation, Diamonds, Quantum information science, Quantum optics, Density functional theory
Abstract: Diamond has been extensively examined as an appealing material for use in quantum optics and quantum information processing owing to the existence of various classes of optically active defects, referred to as "color centers," which can be engineered into its crystal structure. Among these defects, the negatively charged nitrogen-vacancy center (NV−) stands out as the most prominent type. Despite the progress made, the number of emitters characterized by reproducible fabrication processes within the desired spectral range at room temperature, with limited or no damage to the parent diamond lattice, remains restricted. Herein, we are proposing for the first time the creation of the FV− center in diamond via low-energy implantation, which is particularly interesting as it possesses characteristic light absorption and magnetic properties similar to NV− centers. The low-energy ion-implanted FV centers in diamond show more desirable optical emission properties at room temperature (RT). Additionally, as per DFT calculations, the flat bands near the Fermi energy indicate dominant electron–electron interactions, an important prerequisite for observing emergent behavior as seen in systems such as twisted bi-layer graphene. Consequently, as-developed new luminescent defects such as Fluorine Vacancy Centers (FV) with desirable spectral and quantum emission properties would be a significant breakthrough in diamond-based quantum materials. [ABSTRACT FROM AUTHOR]
Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: egs
DbLabel: Engineering Source
An: 191586721
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Formation of Fluorine Vacancy (FV) Centers in Diamond.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Puthirath%2C+Anand+B%2E%22">Puthirath, Anand B.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jle2@rice.edu</i><br /><searchLink fieldCode="AR" term="%22Elkins%2C+Jacob%22">Elkins, Jacob</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kannan%2C+Harikishan%22">Kannan, Harikishan</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Horne%2C+Alyssa%22">Horne, Alyssa</searchLink><relatesTo>2,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Jia-Shiang%22">Chen, Jia-Shiang</searchLink><relatesTo>3,4,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Hao%22">Zhang, Hao</searchLink><relatesTo>5,6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Khabashesku%2C+Valery+N%2E%22">Khabashesku, Valery N.</searchLink><relatesTo>1,7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Biswas%2C+Abhijit%22">Biswas, Abhijit</searchLink><relatesTo>1,8</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Xiang%22">Zhang, Xiang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Birdwell%2C+A%2E+Glen%22">Birdwell, A. Glen</searchLink><relatesTo>2,7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ivanov%2C+Tony+G%2E%22">Ivanov, Tony G.</searchLink><relatesTo>3,7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kentsch%2C+Ulrich%22">Kentsch, Ulrich</searchLink><relatesTo>4,8</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Akhmadaliev%2C+Shavkat%22">Akhmadaliev, Shavkat</searchLink><relatesTo>5,8</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Vajtai%2C+Robert%22">Vajtai, Robert</searchLink><relatesTo>1,6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ma%2C+Xuedan%22">Ma, Xuedan</searchLink><relatesTo>1,3,7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mohite%2C+Aditya+D%2E%22">Mohite, Aditya D.</searchLink><relatesTo>5,8</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Pati%2C+Ranjit%22">Pati, Ranjit</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> patir@mtu.edu</i><br /><searchLink fieldCode="AR" term="%22Ajayan%2C+Pulickel+M%2E%22">Ajayan, Pulickel M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> ajayan@rice.edu</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Feb2026, Vol. 19 Issue 3, p494. 10p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Ion+implantation%22">Ion implantation</searchLink><br /><searchLink fieldCode="DE" term="%22Diamonds%22">Diamonds</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+information+science%22">Quantum information science</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+optics%22">Quantum optics</searchLink><br /><searchLink fieldCode="DE" term="%22Density+functional+theory%22">Density functional theory</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Diamond has been extensively examined as an appealing material for use in quantum optics and quantum information processing owing to the existence of various classes of optically active defects, referred to as "color centers," which can be engineered into its crystal structure. Among these defects, the negatively charged nitrogen-vacancy center (NV−) stands out as the most prominent type. Despite the progress made, the number of emitters characterized by reproducible fabrication processes within the desired spectral range at room temperature, with limited or no damage to the parent diamond lattice, remains restricted. Herein, we are proposing for the first time the creation of the FV− center in diamond via low-energy implantation, which is particularly interesting as it possesses characteristic light absorption and magnetic properties similar to NV− centers. The low-energy ion-implanted FV centers in diamond show more desirable optical emission properties at room temperature (RT). Additionally, as per DFT calculations, the flat bands near the Fermi energy indicate dominant electron–electron interactions, an important prerequisite for observing emergent behavior as seen in systems such as twisted bi-layer graphene. Consequently, as-developed new luminescent defects such as Fluorine Vacancy Centers (FV) with desirable spectral and quantum emission properties would be a significant breakthrough in diamond-based quantum materials. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=191586721
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/ma19030494
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 494
    Subjects:
      – SubjectFull: Ion implantation
        Type: general
      – SubjectFull: Diamonds
        Type: general
      – SubjectFull: Quantum information science
        Type: general
      – SubjectFull: Quantum optics
        Type: general
      – SubjectFull: Density functional theory
        Type: general
    Titles:
      – TitleFull: Formation of Fluorine Vacancy (FV) Centers in Diamond.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Puthirath, Anand B.
      – PersonEntity:
          Name:
            NameFull: Elkins, Jacob
      – PersonEntity:
          Name:
            NameFull: Kannan, Harikishan
      – PersonEntity:
          Name:
            NameFull: Horne, Alyssa
      – PersonEntity:
          Name:
            NameFull: Chen, Jia-Shiang
      – PersonEntity:
          Name:
            NameFull: Zhang, Hao
      – PersonEntity:
          Name:
            NameFull: Khabashesku, Valery N.
      – PersonEntity:
          Name:
            NameFull: Biswas, Abhijit
      – PersonEntity:
          Name:
            NameFull: Zhang, Xiang
      – PersonEntity:
          Name:
            NameFull: Birdwell, A. Glen
      – PersonEntity:
          Name:
            NameFull: Ivanov, Tony G.
      – PersonEntity:
          Name:
            NameFull: Kentsch, Ulrich
      – PersonEntity:
          Name:
            NameFull: Akhmadaliev, Shavkat
      – PersonEntity:
          Name:
            NameFull: Vajtai, Robert
      – PersonEntity:
          Name:
            NameFull: Ma, Xuedan
      – PersonEntity:
          Name:
            NameFull: Mohite, Aditya D.
      – PersonEntity:
          Name:
            NameFull: Pati, Ranjit
      – PersonEntity:
          Name:
            NameFull: Ajayan, Pulickel M.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 02
              Text: Feb2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 19961944
          Numbering:
            – Type: volume
              Value: 19
            – Type: issue
              Value: 3
          Titles:
            – TitleFull: Materials (1996-1944)
              Type: main
ResultId 1