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Numerical analysis of high-efficiency kesterite thin-film solar cells incorporating bilayer CZTSSe/Si absorbers and TMDC-based buffer layers.

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Title: Numerical analysis of high-efficiency kesterite thin-film solar cells incorporating bilayer CZTSSe/Si absorbers and TMDC-based buffer layers.
Authors: Nassour, Abdelkader1 (AUTHOR), Kandouci, Malika1 (AUTHOR), Waar, Ziad Abu2 (AUTHOR), Moustafa, Mohamed3 (AUTHOR) mohamed.orabi@aucegypt.edu
Source: Sādhanā: Academy Proceedings in Engineering Sciences. Jun2026, Vol. 51 Issue 2, p1-22. 22p.
Subjects: Solar cell efficiency, Buffer layers, Holes (Electron deficiencies), Semiconductor junctions, Photovoltaic power generation, Computer simulation
Abstract: In this study, a novel architecture for kesterite-based thin-film solar cells is numerically investigated using the one-dimensional solar cell capacitance simulator (SCAPS-1D) simulation tool. The traditional Cu2ZnSn(S,Se)4 (CZTSSe) absorber is augmented by a bilayer CZTSSe/Si structure. At the same time, the conventional toxic cadmium sulfide (CdS) buffer layer is replaced with environmentally benign and earth-abundant transition metal dichalcogenides (TMDCs), specifically zirconium disulfide (ZrS2), molybdenum disulfide (MoS2), and tungsten disulfide (WS2). This bilayer absorber configuration enhances light absorption and facilitates superior band alignment at the heterojunction, thereby effectively improving charge separation and reducing carrier recombination. TMDC buffer layers provide favorable conduction and valence band offsets with CZTSSe, thereby enhancing interface passivation and minimizing energy losses at the junction. Optimization of the absorber and buffer layer thicknesses, as well as doping concentrations in both p-type and n-type regions, reveals significant enhancements in device performance. Notably, the improved band alignment and reduced recombination at the interfaces contribute to a marked increase in open-circuit voltage (Voc), exceeding 0.737 V, thereby addressing the long-standing Voc deficit in CZTS-based devices. The optimized configurations yield power conversion efficiencies of 21.60%, 22.18%, 23.03%, and 23.94% for the CdS/CZTSSe/Si/Mo, ZrS2/CZTSSe/Si/Mo, MoS2/CZTSSe/Si/Mo, and WS2/CZTSSe/Si/Mo, respectively. The findings of this work present a promising pathway toward the development of high-performance, cost-effective, and eco-friendly CZTSSe thin-film solar cells, paving the way for sustainable next-generation photovoltaic technologies. [ABSTRACT FROM AUTHOR]
Copyright of Sādhanā: Academy Proceedings in Engineering Sciences is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
  Group: Ti
  Data: Numerical analysis of high-efficiency kesterite thin-film solar cells incorporating bilayer CZTSSe/Si absorbers and TMDC-based buffer layers.
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  Data: <searchLink fieldCode="AR" term="%22Nassour%2C+Abdelkader%22">Nassour, Abdelkader</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kandouci%2C+Malika%22">Kandouci, Malika</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Waar%2C+Ziad+Abu%22">Waar, Ziad Abu</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Moustafa%2C+Mohamed%22">Moustafa, Mohamed</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> mohamed.orabi@aucegypt.edu</i>
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  Data: <searchLink fieldCode="JN" term="%22Sādhanā%3A+Academy+Proceedings+in+Engineering+Sciences%22">Sādhanā: Academy Proceedings in Engineering Sciences</searchLink>. Jun2026, Vol. 51 Issue 2, p1-22. 22p.
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  Label: Subjects
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  Data: <searchLink fieldCode="DE" term="%22Solar+cell+efficiency%22">Solar cell efficiency</searchLink><br /><searchLink fieldCode="DE" term="%22Buffer+layers%22">Buffer layers</searchLink><br /><searchLink fieldCode="DE" term="%22Holes+%28Electron+deficiencies%29%22">Holes (Electron deficiencies)</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+junctions%22">Semiconductor junctions</searchLink><br /><searchLink fieldCode="DE" term="%22Photovoltaic+power+generation%22">Photovoltaic power generation</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+simulation%22">Computer simulation</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this study, a novel architecture for kesterite-based thin-film solar cells is numerically investigated using the one-dimensional solar cell capacitance simulator (SCAPS-1D) simulation tool. The traditional Cu2ZnSn(S,Se)4 (CZTSSe) absorber is augmented by a bilayer CZTSSe/Si structure. At the same time, the conventional toxic cadmium sulfide (CdS) buffer layer is replaced with environmentally benign and earth-abundant transition metal dichalcogenides (TMDCs), specifically zirconium disulfide (ZrS2), molybdenum disulfide (MoS2), and tungsten disulfide (WS2). This bilayer absorber configuration enhances light absorption and facilitates superior band alignment at the heterojunction, thereby effectively improving charge separation and reducing carrier recombination. TMDC buffer layers provide favorable conduction and valence band offsets with CZTSSe, thereby enhancing interface passivation and minimizing energy losses at the junction. Optimization of the absorber and buffer layer thicknesses, as well as doping concentrations in both p-type and n-type regions, reveals significant enhancements in device performance. Notably, the improved band alignment and reduced recombination at the interfaces contribute to a marked increase in open-circuit voltage (Voc), exceeding 0.737 V, thereby addressing the long-standing Voc deficit in CZTS-based devices. The optimized configurations yield power conversion efficiencies of 21.60%, 22.18%, 23.03%, and 23.94% for the CdS/CZTSSe/Si/Mo, ZrS2/CZTSSe/Si/Mo, MoS2/CZTSSe/Si/Mo, and WS2/CZTSSe/Si/Mo, respectively. The findings of this work present a promising pathway toward the development of high-performance, cost-effective, and eco-friendly CZTSSe thin-film solar cells, paving the way for sustainable next-generation photovoltaic technologies. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Sādhanā: Academy Proceedings in Engineering Sciences is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1007/s12046-026-03062-3
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      – Code: eng
        Text: English
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        PageCount: 22
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    Subjects:
      – SubjectFull: Solar cell efficiency
        Type: general
      – SubjectFull: Buffer layers
        Type: general
      – SubjectFull: Holes (Electron deficiencies)
        Type: general
      – SubjectFull: Semiconductor junctions
        Type: general
      – SubjectFull: Photovoltaic power generation
        Type: general
      – SubjectFull: Computer simulation
        Type: general
    Titles:
      – TitleFull: Numerical analysis of high-efficiency kesterite thin-film solar cells incorporating bilayer CZTSSe/Si absorbers and TMDC-based buffer layers.
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            NameFull: Nassour, Abdelkader
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            NameFull: Kandouci, Malika
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            NameFull: Waar, Ziad Abu
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            – D: 01
              M: 06
              Text: Jun2026
              Type: published
              Y: 2026
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