APA (7th ed.) Citation

Nafisa, M. T., Rahman, S. M. A., Feng, Z. C., Ferguson, I. T., & Klein, B. (2026). Temperature-Dependent Raman and Spectroscopic Ellipsometry Analysis of MOCVD-Grown GaN/Si (111) Heterostructures With and Without Al2O3 Interlayers. Journal of Electronic Materials, 55(6), 4951. https://doi.org/10.1007/s11664-026-12734-z

Chicago Style (17th ed.) Citation

Nafisa, Manika Tun, S M Atiqur Rahman, Zhe Chuan Feng, Ian T. Ferguson, and Benjamin Klein. "Temperature-Dependent Raman and Spectroscopic Ellipsometry Analysis of MOCVD-Grown GaN/Si (111) Heterostructures With and Without Al2O3 Interlayers." Journal of Electronic Materials 55, no. 6 (2026): 4951. https://doi.org/10.1007/s11664-026-12734-z.

MLA (9th ed.) Citation

Nafisa, Manika Tun, et al. "Temperature-Dependent Raman and Spectroscopic Ellipsometry Analysis of MOCVD-Grown GaN/Si (111) Heterostructures With and Without Al2O3 Interlayers." Journal of Electronic Materials, vol. 55, no. 6, 2026, p. 4951, https://doi.org/10.1007/s11664-026-12734-z.