View in EDS

Temperature-Dependent Raman and Spectroscopic Ellipsometry Analysis of MOCVD-Grown GaN/Si (111) Heterostructures With and Without Al2O3 Interlayers.

Saved in:
Bibliographic Details
Title: Temperature-Dependent Raman and Spectroscopic Ellipsometry Analysis of MOCVD-Grown GaN/Si (111) Heterostructures With and Without Al2O3 Interlayers.
Authors: Nafisa, Manika Tun1 (AUTHOR) mnafisa@students.kennesaw.edu, Rahman, S M Atiqur1 (AUTHOR), Feng, Zhe Chuan1 (AUTHOR), Ferguson, Ian T.1 (AUTHOR), Klein, Benjamin1 (AUTHOR) bklein8@kennesaw.edu
Source: Journal of Electronic Materials. Jun2026, Vol. 55 Issue 6, p4951-4966. 16p.
Subjects: Raman spectroscopy, Metal organic chemical vapor deposition, Stress relaxation (Mechanics), Optical spectroscopy, Optical properties, Materials analysis, Heterostructures
Abstract: This paper presents an extensive structural and optical analysis of epitaxially grown n-type GaN thin films on Si (111) substrates by metal–organic chemical vapor deposition (MOCVD), both with and without atomic layer deposition (ALD) of an Al2O3 interlayer. A systematic investigation of four GaN/Si (111) heterostructures was conducted to assess the combined influence of GaN growth rate (1.25 µm h−1 and 1.8 µm h−1) and the incorporation of a ~20 nm Al2O3 interlayer on strain relaxation, phonon dynamics, and optical quality. The variable temperature-dependent (25–300°C) Raman spectroscopy technique showed clear E2 (high) and A1 (longitudinal optical [LO]) phonon behavior that was affected by biaxial stress, carrier concentration, and LO-phonon–plasmon coupling. The spatial correlation model confirmed increased phonon coherence and reduced intrinsic line width for samples containing the Al2O3 layer, signifying reduced defect density and enhanced crystalline uniformity. Complementary temperature-dependent spectroscopic ellipsometry measurements were performed to extract the refractive index, absorption coefficient, optical bandgap, and Urbach energy. The findings indicate a uniform redshift in the optical bandgap and a rise in Urbach energy with temperature, consistent with the Varshni and Urbach relations, respectively. The slower growth rate, along with Al2O3 interlayer, produced the lowest disorder and greatest optical stability. This study presents the combined effects of oxide-mediated strain relief and kinetic growth control, addressing a critical gap in the understanding of GaN-on-Si integration for cost-effective, high-performance optoelectronic and power devices. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 193684998
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Temperature-Dependent Raman and Spectroscopic Ellipsometry Analysis of MOCVD-Grown GaN/Si (111) Heterostructures With and Without Al<subscript>2</subscript>O<subscript>3</subscript> Interlayers.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Nafisa%2C+Manika+Tun%22">Nafisa, Manika Tun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> mnafisa@students.kennesaw.edu</i><br /><searchLink fieldCode="AR" term="%22Rahman%2C+S+M+Atiqur%22">Rahman, S M Atiqur</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Feng%2C+Zhe+Chuan%22">Feng, Zhe Chuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ferguson%2C+Ian+T%2E%22">Ferguson, Ian T.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Klein%2C+Benjamin%22">Klein, Benjamin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> bklein8@kennesaw.edu</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Jun2026, Vol. 55 Issue 6, p4951-4966. 16p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+organic+chemical+vapor+deposition%22">Metal organic chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Stress+relaxation+%28Mechanics%29%22">Stress relaxation (Mechanics)</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+spectroscopy%22">Optical spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink><br /><searchLink fieldCode="DE" term="%22Materials+analysis%22">Materials analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Heterostructures%22">Heterostructures</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This paper presents an extensive structural and optical analysis of epitaxially grown n-type GaN thin films on Si (111) substrates by metal–organic chemical vapor deposition (MOCVD), both with and without atomic layer deposition (ALD) of an Al2O3 interlayer. A systematic investigation of four GaN/Si (111) heterostructures was conducted to assess the combined influence of GaN growth rate (1.25 µm h−1 and 1.8 µm h−1) and the incorporation of a ~20 nm Al2O3 interlayer on strain relaxation, phonon dynamics, and optical quality. The variable temperature-dependent (25–300°C) Raman spectroscopy technique showed clear E2 (high) and A1 (longitudinal optical [LO]) phonon behavior that was affected by biaxial stress, carrier concentration, and LO-phonon–plasmon coupling. The spatial correlation model confirmed increased phonon coherence and reduced intrinsic line width for samples containing the Al2O3 layer, signifying reduced defect density and enhanced crystalline uniformity. Complementary temperature-dependent spectroscopic ellipsometry measurements were performed to extract the refractive index, absorption coefficient, optical bandgap, and Urbach energy. The findings indicate a uniform redshift in the optical bandgap and a rise in Urbach energy with temperature, consistent with the Varshni and Urbach relations, respectively. The slower growth rate, along with Al2O3 interlayer, produced the lowest disorder and greatest optical stability. This study presents the combined effects of oxide-mediated strain relief and kinetic growth control, addressing a critical gap in the understanding of GaN-on-Si integration for cost-effective, high-performance optoelectronic and power devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=193684998
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-026-12734-z
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 16
        StartPage: 4951
    Subjects:
      – SubjectFull: Raman spectroscopy
        Type: general
      – SubjectFull: Metal organic chemical vapor deposition
        Type: general
      – SubjectFull: Stress relaxation (Mechanics)
        Type: general
      – SubjectFull: Optical spectroscopy
        Type: general
      – SubjectFull: Optical properties
        Type: general
      – SubjectFull: Materials analysis
        Type: general
      – SubjectFull: Heterostructures
        Type: general
    Titles:
      – TitleFull: Temperature-Dependent Raman and Spectroscopic Ellipsometry Analysis of MOCVD-Grown GaN/Si (111) Heterostructures With and Without Al2O3 Interlayers.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Nafisa, Manika Tun
      – PersonEntity:
          Name:
            NameFull: Rahman, S M Atiqur
      – PersonEntity:
          Name:
            NameFull: Feng, Zhe Chuan
      – PersonEntity:
          Name:
            NameFull: Ferguson, Ian T.
      – PersonEntity:
          Name:
            NameFull: Klein, Benjamin
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 06
              Text: Jun2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 03615235
          Numbering:
            – Type: volume
              Value: 55
            – Type: issue
              Value: 6
          Titles:
            – TitleFull: Journal of Electronic Materials
              Type: main
ResultId 1