High-Performance Dynamic Feedback Controlbased 8T SRAM using CNTFET Technology.
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| Title: | High-Performance Dynamic Feedback Controlbased 8T SRAM using CNTFET Technology. |
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| Authors: | Kumar, Abhishek1 abkvjti@gmail.com, Sharma, Vipin Kumar1 |
| Source: | Serbian Journal of Electrical Engineering. Feb2026, Vol. 23 Issue 1, p147-161. 15p. |
| Subjects: | Static random access memory, Carbon nanotube field effect transistors, Miniature electronic equipment, Very large scale circuit integration, Feedback control systems, Cost effectiveness of energy consumption |
| Abstract: | Exploration of new materials and device technologies for integrated circuits has become essential due to the exponential growth in demand for high-performance, energy-efficient, and scalable computers. In light of their exceptional electrical and mechanical characteristics, carbon nanotube field-effect transistors (CNTFETs) have emerged as a competitive alternative to traditional Complementary Metal-Oxide-Semiconductor (CMOS) based devices. In this work, a comprehensive overview of recent advancements, challenges, and prospects concerning CNTFET-based Static Random Access Memory (SRAM) cell design. SRAM performance poses significant challenges for VLSI circuits, including power dissipation, operational speed, area efficiency, and leakage current. Technology scaling-induced short-channel effects advocate transitioning from CMOS to CNTFET-based designs. Here, we propose an SRAM design incorporating Dynamic Feedback Control (DFC) features at CMOS 22nm technology nodes. Simulation results conducted using Synopsis HSPICE demonstrate notable enhancements: a 34% reduction in average power consumption, a 95.3% decrease in leakage current, and a 71.6% improvement in delay compared to MOSFET-based SRAM cells. Moreover, energy efficiency for read/write operations improves by 99.6%, and power dissipation is enhanced by 98.5% over MOSFET-based SRAM designs. [ABSTRACT FROM AUTHOR] |
| Copyright of Serbian Journal of Electrical Engineering is the property of Serbian Journal of Electrical Engineering and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 194237591 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: High-Performance Dynamic Feedback Controlbased 8T SRAM using CNTFET Technology. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Kumar%2C+Abhishek%22">Kumar, Abhishek</searchLink><relatesTo>1</relatesTo><i> abkvjti@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Sharma%2C+Vipin+Kumar%22">Sharma, Vipin Kumar</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Serbian+Journal+of+Electrical+Engineering%22">Serbian Journal of Electrical Engineering</searchLink>. Feb2026, Vol. 23 Issue 1, p147-161. 15p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Static+random+access+memory%22">Static random access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Carbon+nanotube+field+effect+transistors%22">Carbon nanotube field effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Miniature+electronic+equipment%22">Miniature electronic equipment</searchLink><br /><searchLink fieldCode="DE" term="%22Very+large+scale+circuit+integration%22">Very large scale circuit integration</searchLink><br /><searchLink fieldCode="DE" term="%22Feedback+control+systems%22">Feedback control systems</searchLink><br /><searchLink fieldCode="DE" term="%22Cost+effectiveness+of+energy+consumption%22">Cost effectiveness of energy consumption</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Exploration of new materials and device technologies for integrated circuits has become essential due to the exponential growth in demand for high-performance, energy-efficient, and scalable computers. In light of their exceptional electrical and mechanical characteristics, carbon nanotube field-effect transistors (CNTFETs) have emerged as a competitive alternative to traditional Complementary Metal-Oxide-Semiconductor (CMOS) based devices. In this work, a comprehensive overview of recent advancements, challenges, and prospects concerning CNTFET-based Static Random Access Memory (SRAM) cell design. SRAM performance poses significant challenges for VLSI circuits, including power dissipation, operational speed, area efficiency, and leakage current. Technology scaling-induced short-channel effects advocate transitioning from CMOS to CNTFET-based designs. Here, we propose an SRAM design incorporating Dynamic Feedback Control (DFC) features at CMOS 22nm technology nodes. Simulation results conducted using Synopsis HSPICE demonstrate notable enhancements: a 34% reduction in average power consumption, a 95.3% decrease in leakage current, and a 71.6% improvement in delay compared to MOSFET-based SRAM cells. Moreover, energy efficiency for read/write operations improves by 99.6%, and power dissipation is enhanced by 98.5% over MOSFET-based SRAM designs. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Serbian Journal of Electrical Engineering is the property of Serbian Journal of Electrical Engineering and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.2298/SJEE2601147K Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 15 StartPage: 147 Subjects: – SubjectFull: Static random access memory Type: general – SubjectFull: Carbon nanotube field effect transistors Type: general – SubjectFull: Miniature electronic equipment Type: general – SubjectFull: Very large scale circuit integration Type: general – SubjectFull: Feedback control systems Type: general – SubjectFull: Cost effectiveness of energy consumption Type: general Titles: – TitleFull: High-Performance Dynamic Feedback Controlbased 8T SRAM using CNTFET Technology. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kumar, Abhishek – PersonEntity: Name: NameFull: Sharma, Vipin Kumar IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 02 Text: Feb2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 14514869 Numbering: – Type: volume Value: 23 – Type: issue Value: 1 Titles: – TitleFull: Serbian Journal of Electrical Engineering Type: main |
| ResultId | 1 |
