A current-mode bandgap voltage reference with low temperature coefficient and high PSRR using subthreshold MOSFET in 28 nm CMOS.
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| Title: | A current-mode bandgap voltage reference with low temperature coefficient and high PSRR using subthreshold MOSFET in 28 nm CMOS. |
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| Authors: | ZHAO, Chengzhuo1, LÜ, Fangxu1 lvfangxu1988@nudt.edu.cn, XU, Weixia1, HUANG, Heng1, LUO, Zhang1, XIN, Kewei1, WANG, Wenchen1, LI, Meng1, LAI, Mingche1, PANG, Zhengbin1 |
| Source: | Computer Engineering & Science / Jisuanji Gongcheng yu Kexue. May2026, Vol. 48 Issue 5, p770-778. 9p. |
| Subjects: | Voltage references, Metal oxide semiconductor field-effect transistors, Thermal properties, Temperature effect, Analog circuits |
| Abstract: | As the size of core devices in integrated circuits shrinks, large-scale process gradually fails to meet the performance requirements of circuits under advanced technologies. As a fundamental unit in analog circuits, the bandgap voltage reference needs to adapt to process variations. This paper, utilizing a 28 nm CMOS process, proposes a current-mode bandgap voltage reference with excellent power supply rejection ratio (PSRR) over a wide bandwidth range and a low temperature coefficient. Unlike conventional circuits that employ bipolar transistors to generate positive and negative temperature coefficient voltages, this bandgap voltage reference generates a reference voltage by leveraging the temperature characteristics of MOSFET voltages in the subthreshold region. Subthreshold devices have a low turn-on voltage, significantly reducing the common-mode voltage of the amplifier, increasing the vertical voltage margin. By incorporating a current mirror structure to generate a secondary power supply and using a common-gate transistor to increase output resistance, the PSRR over a high bandwidth range is enhanced. Based on a current-mode bandgap reference, this voltage reference circuit operates with a 1.8 V power supply. Under the tt process corner, it provides a stable reference voltage of 943 mV within the temperature range of -40~125 °C, with a temperature coefficient of the reference voltage of 6.1 ppm/ °C. Within an input voltage range of 1.5~5 V, the line regulation is 0.33%. The PSRR is -64.3 dB at DC and remains below -64.1 dB within the frequency range of 0~16 kHz, still reaching -58 dB at 100 kHz. The layout area is 0.003 8 mm², and the quiescent power consumption during operation is 16.56 μW. [ABSTRACT FROM AUTHOR] |
| Copyright of Computer Engineering & Science / Jisuanji Gongcheng yu Kexue is the property of Computer Engineering & Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 194237691 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: A current-mode bandgap voltage reference with low temperature coefficient and high PSRR using subthreshold MOSFET in 28 nm CMOS. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22ZHAO%2C+Chengzhuo%22">ZHAO, Chengzhuo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22LÜ%2C+Fangxu%22">LÜ, Fangxu</searchLink><relatesTo>1</relatesTo><i> lvfangxu1988@nudt.edu.cn</i><br /><searchLink fieldCode="AR" term="%22XU%2C+Weixia%22">XU, Weixia</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22HUANG%2C+Heng%22">HUANG, Heng</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22LUO%2C+Zhang%22">LUO, Zhang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22XIN%2C+Kewei%22">XIN, Kewei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22WANG%2C+Wenchen%22">WANG, Wenchen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22LI%2C+Meng%22">LI, Meng</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22LAI%2C+Mingche%22">LAI, Mingche</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22PANG%2C+Zhengbin%22">PANG, Zhengbin</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Computer+Engineering+%26+Science+%2F+Jisuanji+Gongcheng+yu+Kexue%22">Computer Engineering & Science / Jisuanji Gongcheng yu Kexue</searchLink>. May2026, Vol. 48 Issue 5, p770-778. 9p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Voltage+references%22">Voltage references</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+properties%22">Thermal properties</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink><br /><searchLink fieldCode="DE" term="%22Analog+circuits%22">Analog circuits</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: As the size of core devices in integrated circuits shrinks, large-scale process gradually fails to meet the performance requirements of circuits under advanced technologies. As a fundamental unit in analog circuits, the bandgap voltage reference needs to adapt to process variations. This paper, utilizing a 28 nm CMOS process, proposes a current-mode bandgap voltage reference with excellent power supply rejection ratio (PSRR) over a wide bandwidth range and a low temperature coefficient. Unlike conventional circuits that employ bipolar transistors to generate positive and negative temperature coefficient voltages, this bandgap voltage reference generates a reference voltage by leveraging the temperature characteristics of MOSFET voltages in the subthreshold region. Subthreshold devices have a low turn-on voltage, significantly reducing the common-mode voltage of the amplifier, increasing the vertical voltage margin. By incorporating a current mirror structure to generate a secondary power supply and using a common-gate transistor to increase output resistance, the PSRR over a high bandwidth range is enhanced. Based on a current-mode bandgap reference, this voltage reference circuit operates with a 1.8 V power supply. Under the tt process corner, it provides a stable reference voltage of 943 mV within the temperature range of -40~125 °C, with a temperature coefficient of the reference voltage of 6.1 ppm/ °C. Within an input voltage range of 1.5~5 V, the line regulation is 0.33%. The PSRR is -64.3 dB at DC and remains below -64.1 dB within the frequency range of 0~16 kHz, still reaching -58 dB at 100 kHz. The layout area is 0.003 8 mm², and the quiescent power consumption during operation is 16.56 μW. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Computer Engineering & Science / Jisuanji Gongcheng yu Kexue is the property of Computer Engineering & Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3969/j.issn.1007-130X.2026.05.002 Languages: – Code: chi Text: Chinese PhysicalDescription: Pagination: PageCount: 9 StartPage: 770 Subjects: – SubjectFull: Voltage references Type: general – SubjectFull: Metal oxide semiconductor field-effect transistors Type: general – SubjectFull: Thermal properties Type: general – SubjectFull: Temperature effect Type: general – SubjectFull: Analog circuits Type: general Titles: – TitleFull: A current-mode bandgap voltage reference with low temperature coefficient and high PSRR using subthreshold MOSFET in 28 nm CMOS. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: ZHAO, Chengzhuo – PersonEntity: Name: NameFull: LÜ, Fangxu – PersonEntity: Name: NameFull: XU, Weixia – PersonEntity: Name: NameFull: HUANG, Heng – PersonEntity: Name: NameFull: LUO, Zhang – PersonEntity: Name: NameFull: XIN, Kewei – PersonEntity: Name: NameFull: WANG, Wenchen – PersonEntity: Name: NameFull: LI, Meng – PersonEntity: Name: NameFull: LAI, Mingche – PersonEntity: Name: NameFull: PANG, Zhengbin IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 1007130X Numbering: – Type: volume Value: 48 – Type: issue Value: 5 Titles: – TitleFull: Computer Engineering & Science / Jisuanji Gongcheng yu Kexue Type: main |
| ResultId | 1 |
