Loop formation by ion irradiation in yttria stabilized zirconia
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| Title: | Loop formation by ion irradiation in yttria stabilized zirconia |
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| Authors: | Hojo, T.1, Yamamoto, H.2, Aihara, J.2, Furuno, S.3, Sawa, K.2, Sakuma, T.1, Hojou, K.2 hojo.kiichi@jaea.go.jp |
| Source: | Nuclear Instruments & Methods in Physics Research Section B. Sep2006, Vol. 250 Issue 1/2, p101-105. 5p. |
| Subjects: | Irradiation, Zirconium oxide, Dislocations in crystals, Particles (Nuclear physics) |
| Abstract: | Abstract: Yttria stabilized zirconia (YSZ) is a candidate material focused as optical and insulating materials in nuclear reactors. Therefore, it is useful to investigate defect formation during irradiation, in order to assess YSZ resistance to radiation damage. In the present study, in situ transmission electron microscopy (TEM) observations were performed on YSZ during 30keV Ne+ ion irradiation in the temperature range of 723–1123K (using 100K intervals). Results revealed that damage evolution morphology depends on irradiation temperature. For irradiations below 1023K, defect clusters and bubbles were formed simultaneously. On the other hand, at 1123K, only bubbles were formed in the initial stage of irradiation. Loops formed later following the bubble formation. It was also observed that, in the early stage of irradiation above 923K, larger bubbles were formed along the loop planes compared with other areas. TEM observations indicated that dislocation loops formed on three kinds of crystallographic planes: namely, {100}, {111} and {112} planes. [Copyright &y& Elsevier] |
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| Database: | Engineering Source |
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