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RF–MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substrates

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Title: RF–MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substrates
Authors: Nakamura, T. nakamura@onblab.k.u-tokyo.ac.jp, Tokumoto, Y.1, Katayama, R.1, Yamamoto, T.1, Onabe, K.1
Source: Journal of Crystal Growth. Apr2007, Vol. 301-302, p508-512. 5p.
Subjects: Zirconium oxide, Molecular beam epitaxy, Crystal growth, X-ray diffraction
Abstract: Abstract: Cubic InN (zincblende structure) films have been successfully grown on yttria stabilized zirconia (YSZ) (001) substrates by RF-plasma-assisted molecular beam epitaxy. The X-ray diffraction analysis has confirmed the growth of cubic InN films whose growth temperature was 400– and crystal quality is higher than that on GaAs (001) substrate. The structural properties (i.e. crystal quality and cubic phase purity) of the InN films are obviously improved for the growth condition of a slightly In-rich side of the surface-stoichiometry. By and X-ray reciprocal space mapping measurements, hexagonal phase InN (h-InN) is found to be generated from c- facets. By annealing at several temperatures in air, the surface morphology of YSZ substrates remarkably changes and appears as the stepped and terraced structure. With increasing annealing temperature, the step wandering disappears and the step edges become straighter. By using YSZ substrate with stepped and terraced structure for cubic InN growth, the volume content of cubic InN is drastically increased and is estimated to be at maximum based on an analysis of the X-ray diffraction intensity. [Copyright &y& Elsevier]
Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 24470125
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: RF–MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substrates
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  Data: <searchLink fieldCode="AR" term="%22Nakamura%2C+T%2E%22">Nakamura, T.</searchLink><i> nakamura@onblab.k.u-tokyo.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Tokumoto%2C+Y%2E%22">Tokumoto, Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Katayama%2C+R%2E%22">Katayama, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yamamoto%2C+T%2E%22">Yamamoto, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Onabe%2C+K%2E%22">Onabe, K.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. Apr2007, Vol. 301-302, p508-512. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Zirconium+oxide%22">Zirconium oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+growth%22">Crystal growth</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+diffraction%22">X-ray diffraction</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: Cubic InN (zincblende structure) films have been successfully grown on yttria stabilized zirconia (YSZ) (001) substrates by RF-plasma-assisted molecular beam epitaxy. The X-ray diffraction analysis has confirmed the growth of cubic InN films whose growth temperature was 400– and crystal quality is higher than that on GaAs (001) substrate. The structural properties (i.e. crystal quality and cubic phase purity) of the InN films are obviously improved for the growth condition of a slightly In-rich side of the surface-stoichiometry. By and X-ray reciprocal space mapping measurements, hexagonal phase InN (h-InN) is found to be generated from c- facets. By annealing at several temperatures in air, the surface morphology of YSZ substrates remarkably changes and appears as the stepped and terraced structure. With increasing annealing temperature, the step wandering disappears and the step edges become straighter. By using YSZ substrate with stepped and terraced structure for cubic InN growth, the volume content of cubic InN is drastically increased and is estimated to be at maximum based on an analysis of the X-ray diffraction intensity. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.jcrysgro.2006.11.046
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 508
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      – SubjectFull: Zirconium oxide
        Type: general
      – SubjectFull: Molecular beam epitaxy
        Type: general
      – SubjectFull: Crystal growth
        Type: general
      – SubjectFull: X-ray diffraction
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      – TitleFull: RF–MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substrates
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            NameFull: Katayama, R.
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            NameFull: Yamamoto, T.
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              Text: Apr2007
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              Y: 2007
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              Value: 301-302
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