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Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass

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Title: Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass
Authors: Ueda, A.1 aueda@fisk.edu, Wu, M.1, Aga, R.1, Meldrum, A.2, White, C.W.3, Collins, W.E.1, Mu, R.1
Source: Surface & Coatings Technology. Aug2007, Vol. 201 Issue 19/20, p8542-8546. 5p.
Subjects: Selenium, Quantum dots, Ion implantation, X-ray diffraction
Abstract: Abstract: We have fabricated Se nanoparticles in silica substrates by ion implantation followed by thermal annealing up to 1000 °C, and studied the Se nanoparticle formation by optical absorption spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction, and transmission electron microscopy. The sample with the highest dose (1×1017 ions/cm2) showed the nanoparticle formation during the ion implantation, while the lower dose samples (1 and 3×1016 ions/cm2) required thermal treatment to obtain nano-sized particles. The Se nanoparticles in silica were found to be amorphous. After thermal annealing, the particle sizes became larger than the exciton Bohr radius for bulk Se. Thus, the absorption edges for different doses approached the value of bulk after thermal annealing. The temperature dependent absorption spectra were also measured for this system in a temperature range from 15 to 300 K. [Copyright &y& Elsevier]
Copyright of Surface & Coatings Technology is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 25825659
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass
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  Data: <searchLink fieldCode="JN" term="%22Surface+%26+Coatings+Technology%22">Surface & Coatings Technology</searchLink>. Aug2007, Vol. 201 Issue 19/20, p8542-8546. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Selenium%22">Selenium</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+dots%22">Quantum dots</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+implantation%22">Ion implantation</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+diffraction%22">X-ray diffraction</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Abstract: We have fabricated Se nanoparticles in silica substrates by ion implantation followed by thermal annealing up to 1000 °C, and studied the Se nanoparticle formation by optical absorption spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction, and transmission electron microscopy. The sample with the highest dose (1×1017 ions/cm2) showed the nanoparticle formation during the ion implantation, while the lower dose samples (1 and 3×1016 ions/cm2) required thermal treatment to obtain nano-sized particles. The Se nanoparticles in silica were found to be amorphous. After thermal annealing, the particle sizes became larger than the exciton Bohr radius for bulk Se. Thus, the absorption edges for different doses approached the value of bulk after thermal annealing. The temperature dependent absorption spectra were also measured for this system in a temperature range from 15 to 300 K. [Copyright &y& Elsevier]
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  Data: <i>Copyright of Surface & Coatings Technology is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.surfcoat.2006.02.074
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        Text: English
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      – SubjectFull: Ion implantation
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              Text: Aug2007
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