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W chemical-vapor deposition using (i-C3H7C5H4)2WH2.

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Title: W chemical-vapor deposition using (i-C3H7C5H4)2WH2.
Authors: Ogura, Atsushi1 a_ogura@isc.meiji.ac.jp, Imai, Satoshi1, Kagawa, Taihei1, Kurozaki, Hirotaka1, Ishikawa, Masato2, Muramoto, Ikuyo3, Machida, Hideaki3, Ohshita, Yoshio4
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul2008, Vol. 26 Issue 4, p561-564. 4p. 2 Black and White Photographs, 1 Diagram, 1 Chart, 4 Graphs.
Subjects: Heat resistant alloys, Tungsten, Chemical vapor deposition, Nanotechnology, Melting points, Thin films
Abstract: One of the most popular refractory metals is tungsten or W. Therefore, W chemical-vapor deposition (CVD) is expected to be useful for nanotechnology applications. In some cases, the residual atoms, such as halogen and oxygen, in films may degrade their quality. The authors therefore propose (i-C3H7C5H4)2WH2, i.e., (i-PrCp)2WH2, as a new W precursor because the authors expect some advantages from the absence in this molecule of the F and O that exist in the popular W precursors, WF6 and W(CO2)6. The melting point of (i-PrCp)2WH2 is 30 °C and the precursor has a high vapor pressure of 0.1 torr at 110 °C. The authors conducted W CVD with the (i-PrCp)2WH2 as a precursor and obtained conformal W thin film. The deposition rate was 69 nm/min at 750 °C, and the deposited film had resistivity of 2.3×10-4 Ω cm. However, the deposited film included a tremendous amount of C. Therefore, investigating the possibility of reducing the C contamination is necessary. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
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PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
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  Data: W chemical-vapor deposition using (i-C<subscript>3</subscript>H<subscript>7</subscript>C<subscript>5</subscript>H<subscript>4</subscript>)<subscript>2</subscript>WH<subscript>2</subscript>.
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  Data: <searchLink fieldCode="AR" term="%22Ogura%2C+Atsushi%22">Ogura, Atsushi</searchLink><relatesTo>1</relatesTo><i> a_ogura@isc.meiji.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Imai%2C+Satoshi%22">Imai, Satoshi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kagawa%2C+Taihei%22">Kagawa, Taihei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kurozaki%2C+Hirotaka%22">Kurozaki, Hirotaka</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ishikawa%2C+Masato%22">Ishikawa, Masato</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Muramoto%2C+Ikuyo%22">Muramoto, Ikuyo</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Machida%2C+Hideaki%22">Machida, Hideaki</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Ohshita%2C+Yoshio%22">Ohshita, Yoshio</searchLink><relatesTo>4</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Jul2008, Vol. 26 Issue 4, p561-564. 4p. 2 Black and White Photographs, 1 Diagram, 1 Chart, 4 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Heat+resistant+alloys%22">Heat resistant alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Tungsten%22">Tungsten</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Nanotechnology%22">Nanotechnology</searchLink><br /><searchLink fieldCode="DE" term="%22Melting+points%22">Melting points</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: One of the most popular refractory metals is tungsten or W. Therefore, W chemical-vapor deposition (CVD) is expected to be useful for nanotechnology applications. In some cases, the residual atoms, such as halogen and oxygen, in films may degrade their quality. The authors therefore propose (i-C3H7C5H4)2WH2, i.e., (i-PrCp)2WH2, as a new W precursor because the authors expect some advantages from the absence in this molecule of the F and O that exist in the popular W precursors, WF6 and W(CO2)6. The melting point of (i-PrCp)2WH2 is 30 °C and the precursor has a high vapor pressure of 0.1 torr at 110 °C. The authors conducted W CVD with the (i-PrCp)2WH2 as a precursor and obtained conformal W thin film. The deposition rate was 69 nm/min at 750 °C, and the deposited film had resistivity of 2.3×10-4 Ω cm. However, the deposited film included a tremendous amount of C. Therefore, investigating the possibility of reducing the C contamination is necessary. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
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      – Type: doi
        Value: 10.1116/1.2913581
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 4
        StartPage: 561
    Subjects:
      – SubjectFull: Heat resistant alloys
        Type: general
      – SubjectFull: Tungsten
        Type: general
      – SubjectFull: Chemical vapor deposition
        Type: general
      – SubjectFull: Nanotechnology
        Type: general
      – SubjectFull: Melting points
        Type: general
      – SubjectFull: Thin films
        Type: general
    Titles:
      – TitleFull: W chemical-vapor deposition using (i-C3H7C5H4)2WH2.
        Type: main
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      – PersonEntity:
          Name:
            NameFull: Ogura, Atsushi
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            NameFull: Imai, Satoshi
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            NameFull: Kagawa, Taihei
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            NameFull: Kurozaki, Hirotaka
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            NameFull: Ishikawa, Masato
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            NameFull: Muramoto, Ikuyo
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            – D: 01
              M: 07
              Text: Jul2008
              Type: published
              Y: 2008
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              Value: 07342101
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            – Type: volume
              Value: 26
            – Type: issue
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            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
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