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Development of microcrystalline silicon thin films with high deposition rate (over 10nm/s) using VHF hollow electrode enhanced glow plasma

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Title: Development of microcrystalline silicon thin films with high deposition rate (over 10nm/s) using VHF hollow electrode enhanced glow plasma
Authors: Takashiri, M.1 masayuki_takashiri@komatsu.co.jp, Tabuchi, T.2
Source: Surface & Coatings Technology. Aug2010, Vol. 204 Issue 21/22, p3525-3529. 5p.
Subjects: Thin films, Silicon crystals, Electrodes, Plasma gases, Microfabrication, Electron temperature, Spectrum analysis
Abstract: Abstract: Microcrystalline silicon (μc-Si) thin films with high deposition rate have been fabricated by VHF hollow electrode enhanced glow plasma transportation (VHF–HEEPT). Plasma observation is performed in the discharge chamber and the deposition chamber, and plasma emission spectroscopy is performed in the deposition chamber. The results of the plasma emission spectroscopy indicate that VHF–HEEPT yields a plasma with lower electron temperature compared to RF–HEEPT and conventional capacitively-coupled VHF plasmas. The structural and electrical properties of μc-Si thin films are estimated as a function of the SiH4/H2 ratio. The thin films made by VHF–HEEPT are microcrystalline and have a high deposition rate (12.5nm/s), while thin films made by RF–HEEPT become amorphous for deposition rates over 10nm/s. [Copyright &y& Elsevier]
Copyright of Surface & Coatings Technology is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 51434609
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Development of microcrystalline silicon thin films with high deposition rate (over 10nm/s) using VHF hollow electrode enhanced glow plasma
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  Data: <searchLink fieldCode="AR" term="%22Takashiri%2C+M%2E%22">Takashiri, M.</searchLink><relatesTo>1</relatesTo><i> masayuki_takashiri@komatsu.co.jp</i><br /><searchLink fieldCode="AR" term="%22Tabuchi%2C+T%2E%22">Tabuchi, T.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Surface+%26+Coatings+Technology%22">Surface & Coatings Technology</searchLink>. Aug2010, Vol. 204 Issue 21/22, p3525-3529. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+crystals%22">Silicon crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Electrodes%22">Electrodes</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+gases%22">Plasma gases</searchLink><br /><searchLink fieldCode="DE" term="%22Microfabrication%22">Microfabrication</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+temperature%22">Electron temperature</searchLink><br /><searchLink fieldCode="DE" term="%22Spectrum+analysis%22">Spectrum analysis</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Abstract: Microcrystalline silicon (μc-Si) thin films with high deposition rate have been fabricated by VHF hollow electrode enhanced glow plasma transportation (VHF–HEEPT). Plasma observation is performed in the discharge chamber and the deposition chamber, and plasma emission spectroscopy is performed in the deposition chamber. The results of the plasma emission spectroscopy indicate that VHF–HEEPT yields a plasma with lower electron temperature compared to RF–HEEPT and conventional capacitively-coupled VHF plasmas. The structural and electrical properties of μc-Si thin films are estimated as a function of the SiH4/H2 ratio. The thin films made by VHF–HEEPT are microcrystalline and have a high deposition rate (12.5nm/s), while thin films made by RF–HEEPT become amorphous for deposition rates over 10nm/s. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Surface & Coatings Technology is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1016/j.surfcoat.2010.04.013
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: 3525
    Subjects:
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Silicon crystals
        Type: general
      – SubjectFull: Electrodes
        Type: general
      – SubjectFull: Plasma gases
        Type: general
      – SubjectFull: Microfabrication
        Type: general
      – SubjectFull: Electron temperature
        Type: general
      – SubjectFull: Spectrum analysis
        Type: general
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      – TitleFull: Development of microcrystalline silicon thin films with high deposition rate (over 10nm/s) using VHF hollow electrode enhanced glow plasma
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            NameFull: Takashiri, M.
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              M: 08
              Text: Aug2010
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              Y: 2010
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              Value: 204
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              Value: 21/22
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            – TitleFull: Surface & Coatings Technology
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