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SILICON NANOWIRE TRANSISTOR FABRICATED BY AFM NANOLITHOGRAPHY FOLLOWED BY WET CHEMICAL ETCHING PROCESS.

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Title: SILICON NANOWIRE TRANSISTOR FABRICATED BY AFM NANOLITHOGRAPHY FOLLOWED BY WET CHEMICAL ETCHING PROCESS.
Authors: LEW, K. C.1, HUTAGALUNG, SABAR D.1 mrsabar@eng.usm.my
Source: International Journal of Nanoscience. Aug2010, Vol. 9 Issue 4, p289-293. 5p.
Subjects: Nanowires, Silicon, Transistors, Atomic force microscopy, Electrolytic oxidation, Hydrogen fluoride, Field emission, Nanotechnology
Abstract: Atomic force microscope (AFM) nanolithography was performed to create nanowire transistor pattern via local anodic oxidation process on surface of silicon-on-insulator (SOI) wafer. This nanoscale oxide pattern is used as a mask system for chemical etching to produce silicon nanowire transistor. The device with component structures of a silicon nanowire (SiNW) as channel with source, drain, and gate pads had been drawn at 9 V tip voltage, 6 μm/s writing speed with humidity 55.8-68.9%RH. The designed device was etched with tetramethylammonium hydroxide (TMAH) to remove uncovered silicon layer but oxide pattern remains. In order to obtain SiNW transistor, sample was etched using hydrogen fluoride (HF) to remove oxide layer. From the AFM and field emission scanning electron microscope (FESEM) observation found that the SiNW transistor with wire size of 92.65 nm in wire thickness, 90.83 nm wire width and 10.30 μm in length with contact pads size of about 5 μm × 5 μm has been successfully fabricated. [ABSTRACT FROM AUTHOR]
Copyright of International Journal of Nanoscience is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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  Data: SILICON NANOWIRE TRANSISTOR FABRICATED BY AFM NANOLITHOGRAPHY FOLLOWED BY WET CHEMICAL ETCHING PROCESS.
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  Data: <searchLink fieldCode="AR" term="%22LEW%2C+K%2E+C%2E%22">LEW, K. C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22HUTAGALUNG%2C+SABAR+D%2E%22">HUTAGALUNG, SABAR D.</searchLink><relatesTo>1</relatesTo><i> mrsabar@eng.usm.my</i>
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  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Nanoscience%22">International Journal of Nanoscience</searchLink>. Aug2010, Vol. 9 Issue 4, p289-293. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Nanowires%22">Nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+force+microscopy%22">Atomic force microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Electrolytic+oxidation%22">Electrolytic oxidation</searchLink><br /><searchLink fieldCode="DE" term="%22Hydrogen+fluoride%22">Hydrogen fluoride</searchLink><br /><searchLink fieldCode="DE" term="%22Field+emission%22">Field emission</searchLink><br /><searchLink fieldCode="DE" term="%22Nanotechnology%22">Nanotechnology</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Atomic force microscope (AFM) nanolithography was performed to create nanowire transistor pattern via local anodic oxidation process on surface of silicon-on-insulator (SOI) wafer. This nanoscale oxide pattern is used as a mask system for chemical etching to produce silicon nanowire transistor. The device with component structures of a silicon nanowire (SiNW) as channel with source, drain, and gate pads had been drawn at 9 V tip voltage, 6 μm/s writing speed with humidity 55.8-68.9%RH. The designed device was etched with tetramethylammonium hydroxide (TMAH) to remove uncovered silicon layer but oxide pattern remains. In order to obtain SiNW transistor, sample was etched using hydrogen fluoride (HF) to remove oxide layer. From the AFM and field emission scanning electron microscope (FESEM) observation found that the SiNW transistor with wire size of 92.65 nm in wire thickness, 90.83 nm wire width and 10.30 μm in length with contact pads size of about 5 μm × 5 μm has been successfully fabricated. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of International Journal of Nanoscience is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1142/S0219581X1000682X
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 289
    Subjects:
      – SubjectFull: Nanowires
        Type: general
      – SubjectFull: Silicon
        Type: general
      – SubjectFull: Transistors
        Type: general
      – SubjectFull: Atomic force microscopy
        Type: general
      – SubjectFull: Electrolytic oxidation
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      – SubjectFull: Hydrogen fluoride
        Type: general
      – SubjectFull: Field emission
        Type: general
      – SubjectFull: Nanotechnology
        Type: general
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      – TitleFull: SILICON NANOWIRE TRANSISTOR FABRICATED BY AFM NANOLITHOGRAPHY FOLLOWED BY WET CHEMICAL ETCHING PROCESS.
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            NameFull: LEW, K. C.
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            NameFull: HUTAGALUNG, SABAR D.
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            – D: 01
              M: 08
              Text: Aug2010
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              Y: 2010
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